Charge Transport through Graphene Junctions with Wetting Metal Leads

被引:18
作者
Barraza-Lopez, Salvador [1 ,2 ]
Kindermann, Markus [1 ]
Chou, M. Y. [1 ,3 ]
机构
[1] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
[2] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA
[3] Acad Sinica, Inst Atom & Mol Sci, Taipei 10617, Taiwan
基金
美国国家科学基金会;
关键词
Graphene junctions; quantum transport; pseudodiffusive electron transport; Fano factor; CONTACTS; LIMITS;
D O I
10.1021/nl3004122
中图分类号
O6 [化学];
学科分类号
070301 [无机化学];
摘要
Graphene is believed to be an excellent candidate material for next-generation electronic devices. However, one needs to take into account the nontrivial effect of metal contacts in order to precisely control the charge injection and extraction processes. We have performed transport calculations for graphene junctions with wetting metal leads (metal leads that bind covalently to graphene) using nonequilibrium Green's functions and density functional theory. Quantitative information is provided on the increased resistance with respect to ideal contacts and on the statistics of current fluctuations. We find that charge transport through the studied two-terminal graphene junction with Ti contacts is pseudo-diffusive up to surprisingly high energies.
引用
收藏
页码:3424 / 3430
页数:7
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