Interfacial layer dependence on device property of high-κ TiLaO Ge/Si N-type metal-oxide-semiconductor capacitors at small equivalent-oxide thickness

被引：21

作者：

Chen, W. B. ^{[1
]}

Chin, Albert ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 21期

关键词：

elemental semiconductors; germanium; germanium compounds; high-k dielectric thin films; MOS capacitors; secondary ion mass spectra; silicon; silicon compounds; titanium compounds; transmission electron microscopy; X-ray photoelectron spectra; GE; CMOS; SOURCE/DRAIN;

D O I：

10.1063/1.3265947

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the device property dependence of high dielectric-constant (high-kappa) TiLaO epitaxial-Ge/Si n-type metal-oxide-semiconductor (n-MOS) capacitors on different GeO2 and SiO2 interfacial layers. Large capacitance density of 3.3 mu F/cm(2), small equivalent-oxide thickness (EOT) of 0.81 nm and small C-V hysteresis of 19 mV are obtained simultaneously for MOS capacitor using ultrathin SiO2 interfacial layer, while the device with ultrathin interfacial GeO2 shows inferior performance of larger 1.1 nm EOT and poor C-V hysteresis of 93 mV. From cross-sectional transmission electron microscopy, secondary ion mass spectroscopy, and x-ray photoelectron spectroscopy analysis, the degraded device performance using GeO2 interfacial layer is due to the severe Ge outdiffusion, thinned interfacial GeO2 and thicker gate dielectric after 550 degrees C rapid-thermal anneal.

引用

页数：3

共 22 条

[1] Interface traps and dangling-bond defects in (100)Ge/HfO2 -: art. no. 032107 [J].

Afanas'ev, VV ;

Fedorenko, YG ;

Stesmans, A .

APPLIED PHYSICS LETTERS, 2005, 87 (03)

[2]

BAI WP, 2003, S VLSI TECHN, P121

[3] Low-Threshold-Voltage MoN/HfAlO/SiON p-MOSFETs With 0.85-nm EOT [J].

Chang, M. F. ;

Lee, P. T. ;

Chin, Albert .

IEEE ELECTRON DEVICE LETTERS, 2009, 30 (08) :861-863

[4] Very low Vt [Ir-Hf]/HfLaO CMOS using novel self-aligned low temperature shallow junctions [J].

Cheng, C. F. ;

Wu, C. H. ;

Su, N. C. ;

Wang, S. J. ;

McAlister, S. P. ;

Chin, Albert .

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, :333-+

[5] Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode [J].

Cheng, C. H. ;

Pan, H. C. ;

Yang, H. J. ;

Hsiao, C. N. ;

Chou, C. P. ;

McAlister, S. P. ;

Chin, Albert .

IEEE ELECTRON DEVICE LETTERS, 2007, 28 (12) :1095-1097

[6] Physics and modeling of Ge-on-Insulator MOSFETs [J].

Chin, A ;

Kao, HL ;

Tseng, YY ;

Yu, DS ;

Chen, CC ;

McAlister, SP ;

Chi, CC .

PROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2005, :285-288

[7] Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide [J].

Delabie, Annelies ;

Bellenger, Florence ;

Houssa, Michel ;

Conard, Thierry ;

Van Elshocht, Sven ;

Caymax, Matty ;

Heyns, Marc ;

Meuris, Marc .

APPLIED PHYSICS LETTERS, 2007, 91 (08)

[8]

Huang C. H., 2003, S VLSI, P119

[9] THE EQUILIBRIUM GE(S) + GEO2(S) = 2GEO(G) - THE HEAT OF FORMATION OF GERMANIC OXIDE [J].

JOLLY, WL ;

LATIMER, WM .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1952, 74 (22) :5757-5758

[10] Growth mechanism difference of sputtered HfO2 on Ge and on Si [J].

Kita, K ;

Kyuno, K ;

Toriumi, A .

APPLIED PHYSICS LETTERS, 2004, 85 (01) :52-54

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