Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode

被引:51
作者
Cheng, C. H.
Pan, H. C.
Yang, H. J.
Hsiao, C. N.
Chou, C. P.
McAlister, S. P.
Chin, Albert [1 ]
机构
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Dept Engn Mech, Hsinchu 300, Taiwan
[3] Instrument Technol Res Ctr, Natl Appl Res Labs, Hsinchu, Taiwan
[4] Natl Res Council Canada, Ottawa, ON K1A 0R6, Canada
关键词
high-kappa; Ir; metal-insulator-metal (MIM); TiLaO;
D O I
10.1109/LED.2007.909612
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have fabricated high-kappa. TaN/Ir/TiLaO/TaN metal-insulator-metal capacitors. A low leakage current of 6.6 x 10(-7) A/cm(2) was obtained at 125 degrees C for 24-fF/mu m(2) density capacitors. The excellent device performance is due to the combined effects of the high-kappa TiLaO dielectric, a high work-function Ir electrode, and large conduction band offset.
引用
收藏
页码:1095 / 1097
页数:3
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