Cesium-induced electronic states and space-charge-layer formation in Cs/InSb(110) interface

被引：20

作者：

Betti, MG ^{[1
]}

Biagi, R ^{[1
]}

delPennino, U ^{[1
]}

Mariani, C ^{[1
]}

Pedio, M ^{[1
]}

机构：

[1] CNR, IST STRUTTURA MAT, I-00044 FRASCATI, ITALY

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.53.13605

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a study of the electronic properties of Ca overlayers on the narrow-band-gap III-V semiconductor InSb(110) as determined by means of photoemission and high-resolution electron-energy-loss spectroscopy. The electric and electronic properties of Cs-deposited on InSb(110) present two distinguishable phases, which can be related to the morphological transition observed in the scanning tunneling microscopy from one-dimensional chains to the two-dimensional (2D) Cs layer. The earlier stages of Cs adsorption induce an accumulation layer, while an additional Cs deposition results in a depletion of carriers in coincidence with the appearance of Cs-induced states in the semiconductor gap. When a 2D layer of cesium is formed on the InSb(110) surface, the interface is insulating with the surface band gap at 0.65 eV, larger than the underlying InSb bulk gap (0.175 eV at room temperature).

引用

页码：13605 / 13612

页数：8

共 32 条

[1] SURFACE PHOTOVOLTAGE EFFECTS IN PHOTOEMISSION FROM METAL-GAP(110) INTERFACES - IMPORTANCE FOR BAND-BENDING EVALUATION [J].