Resistive switching of aluminum oxide for flexible memory

被引：105

作者：

Kim, Sungho ^{[1
]}

Choi, Yang-Kyu ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Sch Elect Engn & Comp Sci, Div Elect Engn, Taejon 305701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 22期

关键词：

D O I：

10.1063/1.2939555

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The unipolar resistive switching of the Al/AlxOy/Al structure is investigated for nonvolatile memory. Following the production of aluminum oxide film (AlxOy) by plasma oxidation, a high ratio of on-state and off-state currents (>= 10(4)) is achieved, and characteristics of switching endurance are reported. Due to the good ductility of aluminum, the performance of resistive switching on a flexible substrate is not degraded by severe substrate bending. The low process temperature of the plasma oxidation process is advantageous for the fabrication of flexible electronic devices and modern interconnection processes. (c) 2008 American Institute of Physics.

引用

页数：3

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