Wet silylation and oxygen plasma development of photoresists: A mature and versatile lithographic process for microelectronics and microfabrication

A near-surface imaging process using wet silylation and oxygen plasma development is described. New characterization techniques of films spun on wafers are presented for: (a) quantitative Si concentration determination using proton nuclear magnetic resonance spectroscopy (H), and (b) glass transition and/or flow temperature determination (T-g) of the silylated photoresist using thermomechanical analysis. H-line, I-Line, and deep ultraviolet lithography (at 248 nm) results are presented, while extension to 193 nm Lithography is discussed. Very anisotropic and high aspect ratio pattern transfer to Si, with fluorine-only containing plasmas is demonstrated. Possible applications are discussed. (C) 1996 American Vacuum Society.