Velocity of domain-wall motion induced by electrical current in the ferromagnetic semiconductor (Ga,Mn)As

被引：196

作者：

Yamanouchi, M

Chiba, D

Matsukura, F

Dietl, T

Ohno, H

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Japan Sci & Technol Agcy, ERATO Semicond Spintron Project, Aoba Ku, Sendai, Miyagi 9800023, Japan

[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[4] Univ Warsaw, Inst Theoret Phys, PL-00681 Warsaw, Poland

来源：

PHYSICAL REVIEW LETTERS | 2006年 / 96卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.96.096601

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Current-induced domain-wall motion with velocity spanning over 5 orders of magnitude up to 22 m/s has been observed by the magneto-optical Kerr effect in (Ga,Mn)As with perpendicular magnetic anisotropy. The data are employed to verify theories of spin transfer by the Slonczewski-like mechanism as well as by the torque resulting from spin-flip transitions in the domain-wall region. Evidence for domain-wall creep at low currents is found.

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页码：1 / 4

页数：4

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