Domain-wall resistance in ferromagnetic (Ga,Mn)As

被引：57

作者：

Chiba, D

Yamanouchi, M

Matsukura, F

Dietl, T

Ohno, H

机构：

[1] Japan Sci & Technol Agcy, ERATO, Semicond Spintron Project, Aoba Ku, Sendai, Miyagi 9800023, Japan

[2] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi 9808577, Japan

[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[4] Univ Warsaw, Inst Theoret Phys, PL-00681 Warsaw, Poland

来源：

PHYSICAL REVIEW LETTERS | 2006年 / 96卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.96.096602

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A series of microstructures designed to pin domain walls (DWs) in (Ga,Mn)As with perpendicular magnetic anisotropy has been employed to determine extrinsic and intrinsic contributions to DW resistance. The former is explained quantitatively as resulting from a polarity change in the Hall electric field at DW. The latter is 1 order of magnitude greater than a term brought about by anisotropic magnetoresistance and is shown to be consistent with disorder-induced mistracking of the carrier spins subject to spatially varying magnetization.

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页数：4

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