Comparison of measured and calculated dose for plasma source ion implantation into 3-D objects

被引:26
作者
Mandl, S
Barradas, NP
Brutscher, J
Gunzel, R
Moller, W
机构
[1] Research Center Rossendorf, Inc., Inst. Ion Beam Phys. and Mat. Res., P.O. Box 5101 19
[2] Centro de Física Nuclear, Universidade de Lisboa, Av. Prof. Gama Pinto 2
[3] Dept. of Electron. and Elec. Eng., University of Surrey, Guildford
关键词
D O I
10.1016/S0168-583X(97)00046-3
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Plasma source ion implantation is a method for implanting 3-D objects, The homogeneity of the implantation is measured for two cylinders, representing drills, and a hale, each with a diameter of 8 mm, and compared with theoretical calculations. Nitrogen was implanted in aluminum foil covering the samples using plasma source ion implantation with 30 kV pulses. Rutherford backscattering spectroscopy (RBS) was used to measure the implanted dose at different positions. Using a discrete approximation for the sheath dynamics, the ion distribution was calculated with a simple model. The measured and calculated doses are usually in good agreement for all three samples. The ion dose for the cylinders has an absolute maximum on the top with a position dependent lower dose on the sidewall, In the bottom of the hole the dose was 25% of the dose at the surface, while the dose in the wall was below the RBS detection limit.
引用
收藏
页码:996 / 999
页数:4
相关论文
共 17 条
[1]  
Bohm D., 1949, The Characteristics of Electrical Discharges in Magnetic Fields
[2]   A 100 kV 10 a high-voltage pulse generator for plasma immersion ion implantation [J].
Brutscher, J .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1996, 67 (07) :2621-2625
[3]  
CHEUNG NW, 1993, MATER RES SOC SYMP P, V279, P297
[4]   PLASMA SOURCE ION-IMPLANTATION DOSE UNIFORMITY OF A 2X2 ARRAY OF SPHERICAL TARGETS [J].
CONRAD, JR ;
BAUMANN, S ;
FLEMING, R ;
MEEKER, GP .
JOURNAL OF APPLIED PHYSICS, 1989, 65 (04) :1707-1712
[5]   PLASMA SOURCE ION-IMPLANTATION TECHNIQUE FOR SURFACE MODIFICATION OF MATERIALS [J].
CONRAD, JR ;
RADTKE, JL ;
DODD, RA ;
WORZALA, FJ ;
TRAN, NC .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (11) :4591-4596
[6]   ANALYTICAL MODELING OF PLASMA IMMERSION ION-IMPLANTATION TARGET CURRENT USING THE SPICE CIRCUIT SIMULATOR [J].
EN, W ;
CHEUNG, NW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02) :833-837
[7]  
FANCEY KS, 1995, VACUUM, V4, P695
[8]  
GUNZEL R, 1997, PROTECTIVE COATINGS, P635
[9]   Lateral implantation dose measurements of plasma immersion ion implanted non-planar samples [J].
Hartmann, J ;
Ensinger, W ;
Thomae, RW ;
Bender, H ;
Koniger, A ;
Stritzker, B ;
Rauschenbach, B .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 112 (1-4) :255-258
[10]   DEPENDENCE OF ION-MATRIX DOSE ON DENSITY FOR PLANAR, CYLINDRICAL, AND SPHERICAL ELECTRODES [J].
KISSICK, MW ;
HONG, MP ;
SHAMIM, MM ;
CALLEN, JD ;
CONRAD, JR ;
EMMERT, GA .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (11) :7616-7618