High frequency characterization of a GaInAs/InP electronic waveguide T-branch switch

被引：30

作者：

Lewén, R

Maximov, I

Shorubalko, I

Samuelson, L

Thylén, L

Xu, HQ

机构：

[1] Royal Inst Technol, Dept Elect, Lab Photon & Microwave Engn, S-16440 Kista, Sweden

[2] Lund Univ, Div Solid State Phys, S-22100 Lund, Sweden

[3] Lund Univ, Nanometer Struct Consortium, S-22100 Lund, Sweden

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 04期

关键词：

D O I：

10.1063/1.1429801

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report comprehensive microwave measurements on a T-branch switch; a GaInAs/InP electron waveguide based structure. The study includes a small signal model of the device where limitations of high frequency operation are discussed. An example of large signal operation where the nonlinearity of the device is exploited by operating the T-branch switch as a frequency multiplier is demonstrated. (C) 2002 American Institute of Physics.

引用

页码：2398 / 2402

页数：5

共 13 条

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Datta S., 1995, Electronic Transport in Mesoscopic Systems

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