Long-wavelength luminescence from In0.5Ga0.5As/GaAs quantum dots grown by migration enhanced epitaxy

被引：13

作者：

Baklenov, O ^{[1
]}

Nie, H

Campbell, JC

Streetman, BG

Holmes, AL

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78712 USA

[2] Univ Texas, Dept Elect & Comp Engn, Austin, TX 78712 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 03期

关键词：

D O I：

10.1116/1.590746

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on a systematic study of In0.5Ga0.5As quantum dots Grown by the migration enhanced epitaxy technique. A maximum room-temperature luminescence wavelength of 1.37 mu m has been achieved. We observe the presence of two emission maxima, which we attribute to the formation and interaction of two different dot-size distributions. Photoluminescence data analysis shows the formation of large quantum dots with good size uniformity that emit at 1.3 mu m and longer due to the enhanced atomic migration lengths. (C) 1999 American Vacuum Society. [S0734-211X(99)01103-8].

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收藏

页码：1124 / 1126

页数：3

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