Hole-mediated ferromagnetic properties in Zn1-xMnxO thin films

被引：70

作者：

Lim, SW ^{[1
]}

Jeong, MC ^{[1
]}

Ham, MH ^{[1
]}

Myoung, JM ^{[1
]}

机构：

[1] Yonsei Univ, Informat & Elect Mat Res Lab, Dept Mat Sci & Engn, Seoul 120749, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 2B期

关键词：

p-type ZnMnO; DMSs; room-temperature ferromagnetism; hole-mediated ferromagnetism; rf magnetron cosputtering;

D O I：

10.1143/JJAP.43.L280

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the room-temperature hole-mediated ferromagnetism in Zn1-xMnxO thin films. Zn1-xMnxO (x = 0.03 and 0.20) films were prepared on GaAs (001) substrates by the rf magnetron cosputtering method. At the substrate temperature high enough to activate As diffusion from GaAs substrates, p-type Zn1-xMnxO films were synthesized. The superconducting quantum interference device (SQUID) and alternating gradient magnetometer (AGM) results clearly showed ferromagnetic characteristics at room temperature.

引用

页码：L280 / L283

页数：4

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