Metalorganic chemical vapor deposition selective growth and characterization of InGaN quantum dots

被引：39

作者：

Wang, J ^{[1
]}

Nozaki, M ^{[1
]}

Lachab, M ^{[1
]}

Ishikawa, Y ^{[1
]}

Fareed, RSQ ^{[1
]}

Wang, T ^{[1
]}

Hao, M ^{[1
]}

Sakai, S ^{[1
]}

机构：

[1] Univ Tokushima, Dept Elect & Elect Engn, Satellite Venture Business Lab, Tokushima 7708506, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 07期

关键词：

D O I：

10.1063/1.124564

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InGaN quantum dots (QDs) have been formed by metalorganic chemical vapor deposition selective growth on Si-patterned GaN/sapphire substrates. The QDs were fabricated on GaN plinths grown within nanoscale circular windows opened in the Si mask by both focused ion-beam irradiation and photoassisted wet chemical etching. Using this process, the epitaxial growth of GaN plinths could be achieved on an underlying GaN layer spared from process-induced damage. The optical properties of the InGaN QDs have been investigated by low-temperature cathodoluminescence measurements. Compared to the band-gap emission from a reference sample of InGaN/GaN multiple quantum wells, the evident blueshift of the emission peak from the InGaN QDs was demonstrated. This result suggests that the carriers in the InGaN QDs were three-dimensionally confined. (C) 1999 American Institute of Physics. [S0003-6951(99)03733-X].

引用

页码：950 / 952

页数：3

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