Early nitriding stage of evaporated-Ti thin films by N-ion implantation

被引：14

作者：

Kasukabe, Y ^{[1
]}

Takeda, S ^{[1
]}

Fiujno, Y ^{[1
]}

Yamada, Y ^{[1
]}

Nagata, S ^{[1
]}

Kishimoto, M ^{[1
]}

Yamaguchi, S ^{[1
]}

机构：

[1] TOHOKU UNIV, INST MAT RES, SENDAI, MIYAGI 98077, JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1997年 / 15卷 / 04期

关键词：

D O I：

10.1116/1.580651

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The early growth stage of epitaxial titanium nitride (TIN) films, formed by implanting nitrogen ions (N-2(+)) with 62 keV into 100-nm-thick evaporated-Ti films, was studied by transmission electron microscopy, Rutherford backscattering spectrometry and elastic recoil detection analysis. Evaporated-Ti films spontaneously absorb hydrogen (H) from the interior of the NaCl substrate, and then TiHx partially grows in addition to the hcp-Ti. The implantation of N into evaporated-Ti films expands the hcp-Ti lattice and reduces the H concentration in the evaporated-Ti film. The former induces the hcp-fcc transformation and then leads to the growth of (001)-oriented TiNy by the occupation of N in octahedral (O) sites in the fcc-Ti sublattice. The latter induces contraction of the fcc-Ti sublattice by the escape of H from (110)-oriented TiHx and then leads to the growth of (110)-oriented TiNy by the occupation in O sites of the H-escaped metastable fcc-Ti lattice by N. The nitriding mechanism of epitaxial Ti thin films is discussed. (C) 1997 American Vacuum Society.

引用

页码：1848 / 1852

页数：5

共 19 条

[1] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OBSERVATION OF DYNAMIC ION-BEAM MIXING PROCESS IN TITANIUM NITRIDE CRYSTAL-GROWTH [J].

BEAG, YW ;

MIN, K ;

INOUE, M ;

KIUCHI, M ;

FUJII, K ;

SHIMIZU, R .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (10) :4714-4717

[2] LASER DEPOSITION OF EPITAXIAL TITANIUM NITRIDE FILMS ON (100) MGO [J].

BIUNNO, N ;

NARAYAN, J ;

SRIVATSA, AR ;

HOLLAND, OW .

APPLIED PHYSICS LETTERS, 1989, 55 (04) :405-407

[3]

CHRETIEN A, 1954, CR HEBD ACAD SCI, V238, P1423

[4] STRUCTURE AND PROPERTIES OF TITANIUM NITRIDE THIN-FILMS DEPOSITED AT LOW-TEMPERATURES USING DIRECT-CURRENT MAGNETRON SPUTTERING [J].

ELSTNER, F ;

EHRLICH, A ;

GIEGENGACK, H ;

KUPFER, H ;

RICHTER, F .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (02) :476-483

[5] LOW-ENERGY ION IRRADIATION DURING FILM GROWTH FOR REDUCING DEFECT DENSITIES IN EPITAXIAL TIN(100) FILMS DEPOSITED BY REACTIVE-MAGNETRON SPUTTERING [J].

HULTMAN, L ;

HELMERSSON, U ;

BARNETT, SA ;

SUNDGREN, JE ;

GREENE, JE .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) :552-555

[6] GROWTH AND PROPERTIES OF SINGLE-CRYSTAL TIN FILMS DEPOSITED BY REACTIVE MAGNETRON SPUTTERING [J].

JOHANSSON, BO ;

SUNDGREN, JE ;

GREENE, JE ;

ROCKETT, A ;

BARNETT, SA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (02) :303-307

[7] EPITAXIAL CUBIC AND HEXAGONAL CRYSTALLITES IN TITANIUM THIN-FILMS EVAPORATED ONTO SODIUM-CHLORIDE SUBSTRATES [J].

KASUKABE, Y ;

YAMADA, Y ;

BURSILL, LA .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1993, 67 (01) :73-85

[8] NITRIDING OF EVAPORATED-TI THIN-FILMS BY ION-IMPLANTATION [J].

KASUKABE, Y ;

OOTUBO, J ;

NAGATA, S ;

KISHIMOTO, M ;

FUJINO, Y ;

YAMAGUCHI, S ;

YAMADA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (6A) :3234-3239

[9]

KASUKABE Y, 1990, JPN J APPL PHYS 2, V29, pL1904, DOI 10.1143/JJAP.29.L1904

[10] HETEROEPITAXIAL TIN FILMS GROWN BY REACTIVE ION-BEAM EPITAXY AT ROOM-TEMPERATURE [J].

KAWAKUBO, T ;

SANO, K ;

OOSE, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (11B) :L1692-L1694

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