Dynamic threshold voltage damascene metal gate MOSFET (DT-DMG-MOS) technology for very low voltage operation of under 0.7 V

被引：5

作者：

Yagishita, A ^{[1
]}

Saito, T ^{[1
]}

Inumiya, S ^{[1
]}

Matsuo, K ^{[1
]}

Tsunashima, Y ^{[1
]}

Suguro, K ^{[1
]}

机构：

[1] Semicond Co, Toshiba Corp 8, Proc & Mfg Engn Ctr, Yokohama, Kanagawa 2358522, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 03期

关键词：

aluminum; chemical mechanical polishing (CMP); counter doping; damascene; dynamic threshold voltage MOSFET (DTMOS); high-k gate dielectric; metal gate; subthreshold swing (S-factor); tungsten; TiN; Ta2O5; threshold voltage deviation; work function;

D O I：

10.1109/16.987112

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose dynamic threshold-voltage damascene metal gate MOSFET (DT-DMG-MOS) technology for very low voltage operation (under 0.7 V). In this technology the metal gate is formed by the damascene gate process and directly connected to the well region (Si-body). Therefore, the connection between gate electrode and silicon body can be more easily fabricated in the DT-DMG transistor than with conventional technologies. Furthermore, we found that low threshold voltage (about 0.15 V reduction for CMOS), high drive current, excellent subthreshold swing (about 60 mV/decade), and uniform electrical characteristics (great reduction of threshold voltage deviation) were obtained in the transistors with midgap work function metal gates (Al/TiN or W/TiN) and low supply voltage (0.7 V).

引用

页码：422 / 428

页数：7

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