Reduction of electrical resistance of nanometer-thick CoSi2 film on CaF2 by pseudomorphic growth of CaF2 on Si(111)

被引：1

作者：

Saitoh, W ^{[1
]}

Mori, K ^{[1
]}

Sugiura, H ^{[1
]}

Maruyama, T ^{[1
]}

Watanabe, M ^{[1
]}

Asada, M ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,RES CTR QUANTUM EFFECT ELECT,MEGURO KU,TOKYO 152,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 7A期

关键词：

CoSi2/CaF2 heterostructure on Si; very thin metal film; pseudomorphic CaF2; relaxed CaF2;

D O I：

10.1143/JJAP.36.4470

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

1.9-nm-thick epitaxial metal (CoSi2) films sere grown on relaxed or pseudomorphic CaF2/Si(111) and their electrical resistance was measured, It was found that the electrical resistance of the CoSi2 film on pseudomorphic CaF2 was about half of that on relaxed CaF2. This result can be attributed to the improved of flatness and crystalline quality of the CoSi2 by using of pseudomorphic CaF2 instead of relaxed CaF2 due to the fiat pseudomorphic CaF2 surface and the small lattice mismatch between CoSi2 and pseudomorphic CaF2.

引用

页码：4470 / 4471

页数：2

共 7 条

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