Formation of Gd oxide thin films on (111)Si

被引：11

作者：

Chen, JC ^{[1
]}

Shen, GH ^{[1
]}

Chen, LJ ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30043, Taiwan

来源：

APPLIED SURFACE SCIENCE | 1999年 / 142卷 / 1-4期

关键词：

silicide; Gd oxide; Gd metal;

D O I：

10.1016/S0169-4332(98)00663-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Formation of Gd oxide thin films on (111)Si has been investigated. A complicated multilayered structure was formed in Gd thin films on (111)Si annealed in O-2 ambient. On the other hand, a uniform oxide layer was formed in GdSi2-x films on (111)Si oxidized in O-2 ambient. Oxidation mechanisms are discussed. (C) 1999 Published by Elsevier Science B.V. All rights reserved.

引用

页码：120 / 123

页数：4

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