Matrix addressable micro-pixel 280 mn deep UV light-emitting diodes

被引：23

作者：

Wu, Shuai ^{[1
]}

Chhajed, Sameer ^{[1
]}

Yan, Li ^{[1
]}

Sun, Wenhong ^{[1
]}

Shatalov, Maxim ^{[1
]}

Adivarahan, Vinod ^{[1
]}

Khan, M. Asif ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2006年 / 45卷 / 12-16期

关键词：

MOCVD; AlGan; ultraviolet; epitaxy; light-emitting diode;

D O I：

10.1143/JJAP.45.L352

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the fabrication and characterization of a 10 x 10 matrix addressable micro-pixel AlGaN-based deep UV light-emitting diodes (LEDs) with emission at 280 nm. Deep reactive ion etching and benzocyclobutene dielectric deposition were used for pixel isolation and planarization prior to the electrode grid metallization. A comparative study of devices with interconnected and individually controlled pixels is also presented to show the viability of scaling up.

引用

页码：L352 / L354

页数：3

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