Micro-pixel design milliwatt power 254 nm emission light emitting diodes

被引：38

作者：

Wu, S ^{[1
]}

Adivarahan, V ^{[1
]}

Shatalov, M ^{[1
]}

Chitnis, A ^{[1
]}

Sun, WH ^{[1
]}

Khan, MA ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 8A期

关键词：

UV LED; MOW; micro-LED; AlGaN; buffer; strain relief;

D O I：

10.1143/JJAP.43.L1035

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on AlGaN based deep ultraviolet (UV) light emitting diodes (LED) with a novel micro-pixel design and emission at 254 nm. The micro-pixel design was adopted to improve the lateral current spreading and to reduce the operation voltages. For a 4 x 4 and 10 x 10 interconnected 30 mum diameter micro-pixel design, the device series resistances as low as 17 Omega and 11 Omega were measured. For an unpackaged 10 x 10 pixel design LED, pulsed output power as high as 1 mW was measured at a pump current of 1 A which translates to a peak external quantum efficiency of 0.02%.

引用

页码：L1035 / L1037

页数：3

共 10 条

[1]

ADIVARAHAN V, IN PRESS APPL PHYS L

[2] Analysis of the visible and UV electroluminescence in homojunction GaN LED's [J].

Calle, F ;

Monroy, E ;

Sanchez, FJ ;

Munoz, E ;

Beaumont, B ;

Haffouz, S ;

Leroux, M ;

Gibart, P .

MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1998, 3 (24) :art. no.-24

[3] Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm [J].

Chitnis, A ;

Sun, J ;

Mandavilli, V ;

Pachipulusu, R ;

Wu, S ;

Gaevski, M ;

Adivarahan, V ;

Zhang, JP ;

Khan, MA ;

Sarua, A ;

Kuball, M .

APPLIED PHYSICS LETTERS, 2002, 81 (18) :3491-3493

[4] Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels [J].

Fischer, AJ ;

Allerman, AA ;

Crawford, MH ;

Bogart, KHA ;

Lee, SR ;

Kaplar, RJ ;

Chow, WW ;

Kurtz, SR ;

Fullmer, KW ;

Figiel, JJ .

APPLIED PHYSICS LETTERS, 2004, 84 (17) :3394-3396

[5] High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well [J].

Mayes, K ;

Yasan, A ;

McClintock, R ;

Shiell, D ;

Darvish, SR ;

Kung, P ;

Razeghi, M .

APPLIED PHYSICS LETTERS, 2004, 84 (07) :1046-1048

[6] Time-resolved electroluminescence of AlGaN-based light-emitting diodes with emission at 285 nm [J].

Shatalov, M ;

Chitnis, A ;

Mandavilli, V ;

Pachipulusu, R ;

Zhang, JP ;

Adivarahan, V ;

Wu, S ;

Simin, G ;

Khan, MA ;

Tamulaitis, G ;

Sereika, A ;

Yilmaz, I ;

Shur, MS ;

Gaska, R .

APPLIED PHYSICS LETTERS, 2003, 82 (02) :167-169

[7]

SUN WH, IN PRESS APPL PHYS L

[8] AlGaN multiple-quantum-well-based, deep ultraviolet light-emitting diodes with significantly reduced long-wave emission [J].

Zhang, JP ;

Wu, S ;

Rai, S ;

Mandavilli, V ;

Adivarahan, V ;

Chitnis, A ;

Shatalov, M ;

Khan, MA .

APPLIED PHYSICS LETTERS, 2003, 83 (17) :3456-3458

[9] Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm [J].

Zhang, JP ;

Chitnis, A ;

Adivarahan, V ;

Wu, S ;

Mandavilli, V ;

Pachipulusu, R ;

Shatalov, M ;

Simin, G ;

Yang, JW ;

Khan, MA .

APPLIED PHYSICS LETTERS, 2002, 81 (26) :4910-4912

[10] Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1-xN structures for deep ultraviolet emissions below 230 nm [J].

Zhang, JP ;

Khan, MA ;

Sun, WH ;

Wang, HM ;

Chen, CQ ;

Fareed, Q ;

Kuokstis, E ;

Yang, JW .

APPLIED PHYSICS LETTERS, 2002, 81 (23) :4392-4394

← 1 →