Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm

被引：165

作者：

Zhang, JP ^{[1
]}

Chitnis, A ^{[1
]}

Adivarahan, V ^{[1
]}

Wu, S ^{[1
]}

Mandavilli, V ^{[1
]}

Pachipulusu, R ^{[1
]}

Shatalov, M ^{[1
]}

Simin, G ^{[1
]}

Yang, JW ^{[1
]}

Khan, MA ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 26期

关键词：

D O I：

10.1063/1.1531835

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on AlGaN multiple-quantum-well (MQW)-based deep ultraviolet light-emitting diodes over sapphire with peak emission at 278 nm. A new buffer layer growth process was used to reduce the number of defects and hence the nonradiative recombination. The improved material quality and carrier confinement resulted in pulsed powers as high as 3 mW at 278 nm and a significantly reduced deep-level-assisted long-wavelength emission. (C) 2002 American Institute of Physics.

引用

页码：4910 / 4912

页数：3

共 12 条

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Adivarahan, V
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