Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm

被引:121
作者
Chitnis, A [1 ]
Sun, J
Mandavilli, V
Pachipulusu, R
Wu, S
Gaevski, M
Adivarahan, V
Zhang, JP
Khan, MA
Sarua, A
Kuball, M
机构
[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA
[2] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England
关键词
D O I
10.1063/1.1518155
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present a detailed high-pump-current study of self-heating effects in ultraviolet light-emitting diodes (LEDs) grown on sapphire. For deep ultraviolet LEDs on sapphire, our results establish self-heating to be a primary cause of premature power saturation under dc pumping. Even the flip-chip packaged devices undergo a steady-state temperature rise to about 70degreesC at a dc pump current of only 50 mA (at 8 V) resulting in a significant decrease in LED output. Temperature rise values estimated from peak emission wavelength shifts and from micro-Raman mapping of the active devices were in good agreement. (C) 2002 American Institute of Physics.
引用
收藏
页码:3491 / 3493
页数:3
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