共 14 条
- [1] Sub-milliwatt power III-N light emitting diodes at 285 nm [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (4B): : L435 - L436
- [3] 324 nm light emitting diodes with milliwatt powers [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (4B): : L450 - L451
- [4] Iwaya M, 2001, PHYS STATUS SOLIDI A, V188, P117, DOI 10.1002/1521-396X(200111)188:1<117::AID-PSSA117>3.0.CO
- [5] 2-X
- [6] Stripe geometry ultraviolet light emitting diodes at 305 nanometers using quaternary AlInGaN multiple quantum wells [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (12A): : L1308 - L1310
- [10] Room temperature 339 nm emission from Al0.13Ga0.87N/Al0.10Ga0.90N double heterostructure light-emitting diode on sapphire substrate [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (5B): : L445 - L448