Modified transmission line model and its application to aluminum ohmic contacts with n-type GaN

被引：11

作者：

Chen, NC ^{[1
]}

Chang, PH

Chiu, AP

Wang, MC

Feng, WS

Wu, GM

Shih, CF

Liu, KS

机构：

[1] Chang Gung Univ, Dept Elect Engn, Tao Yuan, Taiwan

[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 14期

关键词：

D O I：

10.1063/1.1704855

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A modified transmission line model (MTLM) of ohmic contact measurement is presented. This model preserves the simplicity of the circular transmission line model but eliminates the shortcoming of the possibility of obtaining misleading results. This model was applied to n-type GaN ohmic contacts and results similar to those obtained by Hall measurement were obtained. The ohmic contact pattern used in MTLM method occasionally exists during the fabrication of several devices. In such cases, the method can be used to determine the device processing quality without the need for any other test pattern. (C) 2004 American Institute of Physics.

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页码：2584 / 2586

页数：3

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共 14 条

[1] INVESTIGATION OF AUGENI CONTACTS USING RECTANGULAR AND CIRCULAR TRANSMISSION-LINE MODEL [J].

AHMAD, M ;

ARORA, BM .

SOLID-STATE ELECTRONICS, 1992, 35 (10) :1441-1445

[2] Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN [J].

Horng, RH ;

Wuu, DS ;

Lien, YC ;

Lan, WH .

APPLIED PHYSICS LETTERS, 2001, 79 (18) :2925-2927

[3] Low-resistance nonalloyed ohmic contact to p-type GaN using strained InGaN contact layer [J].

Kumakura, K ;

Makimoto, T ;

Kobayashi, N .

APPLIED PHYSICS LETTERS, 2001, 79 (16) :2588-2590

[4] Nitride-based light-emitting diodes with Ni/ITO p-type ohmic contacts [J].

Lin, YC ;

Chang, SJ ;

Su, YK ;

Tsai, TY ;

Chang, CS ;

Shei, SC ;

Hsu, SJ ;

Liu, CH ;

Liaw, UH ;

Chen, SC ;

Huang, BR .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (12) :1668-1670

[5] Investigation of degradation for ohmic performance of oxidized Au/Ni/Mg-doped GaN [J].

Lin, YJ ;

Li, ZD ;

Hsu, CW ;

Chien, FT ;

Lee, CT ;

Shao, ST ;

Chang, HC .

APPLIED PHYSICS LETTERS, 2003, 82 (17) :2817-2819

[6] THE EFFECTS OF CONTACT SIZE AND NON-ZERO METAL RESISTANCE ON THE DETERMINATION OF SPECIFIC CONTACT RESISTANCE [J].

MARLOW, GS ;

DAS, MB .

SOLID-STATE ELECTRONICS, 1982, 25 (02) :91-94

[7] High-transparency Ni/Au bilayer contacts to n-type GaN [J].

Motayed, A ;

Davydov, AV ;

Bendersky, LA ;

Wood, MC ;

Derenge, MA ;

Wang, DF ;

Jones, KA ;

Mohammad, SN .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (09) :5218-5227

[8] Formation of epitaxial Au/Ni/Au ohmic contacts to p-GaN [J].

Narayan, J ;

Wang, H ;

Oh, TH ;

Choi, HK ;

Fan, JCC .

APPLIED PHYSICS LETTERS, 2002, 81 (21) :3978-3980

[9] Cr/Al and Cr/Al/Ni/Au ohmic contacts to n-type GaN [J].

Papanicolaou, NA ;

Edwards, A ;

Rao, MV ;

Mittereder, J ;

Anderson, WT .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :380-386

[10] OBTAINING THE SPECIFIC CONTACT RESISTANCE FROM TRANSMISSION-LINE MODEL MEASUREMENTS [J].

REEVES, GK ;

HARRISON, HB .

ELECTRON DEVICE LETTERS, 1982, 3 (05) :111-113