Coaxial p-Si/n-ZnO nanowire heterostructures for energy and sensing applications

被引：14

作者：

Gad, A. E. ^{[3
]}

Hoffmann, M. W. G. ^{[3
]}

Hernandez-Ramirez, F. ^{[1
,2
]}

Prades, J. D. ^{[1
]}

Shen, H. ^{[3
]}

Mathur, S. ^{[3
]}

机构：

[1] Univ Barcelona, Dept Elect, E-08028 Barcelona, Spain

[2] Catalonia Inst Energy Res IREC, Dept Adv Mat Energy Applicat, E-08930 Barcelona, Spain

[3] Univ Cologne, Chair Inorgan & Mat Chem, Inst Inorgan Chem, D-50939 Cologne, Germany

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2012年 / 135卷 / 2-3期

关键词：

Metal oxide; Silicon; Nanowire; Core-shell; Device; Sensor; SOLAR-CELLS; OXIDE; FABRICATION; DEVICES; SENSORS; HETEROJUNCTIONS; SENSITIVITY; PLANAR;

D O I：

10.1016/j.matchemphys.2012.05.034

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Radial p-n nanowire heterojunction devices represent a favorable geometry to maximize the interfacial area and charge carrier separation due to the built-in field established across the junction. This report presents the functional characterization of a heterojunction device based on a single coaxial p-Si/n-ZnO nanowire that was integrated in a circuit by FIB nanolithography to study the electrical properties. Specifically, their photovoltaic and gas sensing performances were preliminary assessed. The gas sensing response of the p-n heterojunction could be usefully modulated by controlling the bias currents through the device, showing a complementary functionality of these nanoarchitectured devices. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：618 / 622

页数：5

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