A universal ion-beam-sputtering device for diffusion studies

被引：64

作者：

Wenwer, F

Gude, A

Rummel, G

Eggersmann, M

Zumkley, T

Stolwijk, NA

Mehrer, H

机构：

[1] Institut für Metallforschung, Universität Münster, D-48149 Münster

来源：

MEASUREMENT SCIENCE AND TECHNOLOGY | 1996年 / 7卷 / 04期

关键词：

D O I：

10.1088/0957-0233/7/4/021

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An apparatus for ion-beam-sputtering is described which offers for the first time the possibility of measuring radiotracer diffusion profiles with mean diffusion length (Dt)(1/2) (D is the tracer diffusion coefficient and t is the diffusion time) in the nano- as well as in the micrometre range. it is also possible to use the device for ion milling, especially for the deposition of thin layers of radiotracer onto diffusion samples. Investigations of diffusion in pure metals, in a metallic glass, in a compound semiconductor and in intermetallic compounds are presented as examples.

引用

页码：632 / 640

页数：9

共 23 条

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AITKEN D, 1982, ION IMPLANTATION TEC, P23

[2] EVALUATION OF RADIO-FREQUENCY SPUTTERING AS A MICRO-SECTIONING TECHNIQUE FOR TRACER DIFFUSION STUDIES IN OXIDES [J].