Luminescence from indented Te-doped GaSb crystals

被引：10

作者：

Chioncel, MF ^{[1
]}

Díaz-Guerra, C

Piqueras, J

机构：

[1] Univ Complutense Madrid, Dept Fis Mat, Fac Ciencias Fis, E-28040 Madrid, Spain

[2] Univ Bucharest, Fac Chem, Dept Phys, Bucharest 70364, Romania

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 03期

关键词：

D O I：

10.1088/0268-1242/19/3/036

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cathodoluminescence in the scanning electron microscope has been used to investigate the effect of plastic deformation, produced by indentation, in Te-doped GaSb crystals. Deformation has been found to cause a strong quenching of the luminescence emission as well as spectral changes. In particular, the decrease of the near band edge emission is accompanied by the relative increase of the defect band A and of the 730 meV band related to the VGaGaSbTesb centres. Annealing treatments up to 600 degreesC lead to partial recovery of the deformation induced defects, and reveal the existence of Te out-diffusion processes from the deformed areas.

引用

页码：490 / 493

页数：4

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