Study of Zn diffusion in n-type GaSb by cathodoluminescence and scanning tunneling spectroscopy

被引：3

作者：

Hidalgo, P

Méndez, B

Piqueras, J ^{[1
]}

Dutta, PS

机构：

[1] Univ Complutense Madrid, Fac Fis, Dept Fis Mat, E-28040 Madrid, Spain

[2] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 80卷 / 1-3期

关键词：

scanning tunneling spectroscopy; diffusion; gallium antimonide; junctions;

D O I：

10.1016/S0921-5107(00)00635-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report here the studies carried out in zinc diffused n-type GaSb by cathodoluminescence (CL) microscopy and by scanning tunneling spectroscopy. Samples with different diffusion profiles measured by secondary ion mass spectrometry (SIMS) were obtained. CL plan-view observations show high homogeneity in the diffused layers. Cross-sectional measurements of the Zn diffused layers were performed by current imaging tunneling spectroscopy (CITS). The junction border was revealed clearly in the CITS images and conductance spectra recorded at differents points of the layers provided information on the local surface band gaps and the conductive behaviour. The results were related to the diffusion profiles and were found to agree with diffusion models suggested previously. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：125 / 129

页数：5

共 19 条

[1] SCANNING-TUNNELING-MICROSCOPY SCANNING ELECTRON-MICROSCOPY COMBINED INSTRUMENT [J].