Scanning tunneling spectroscopy study of erbium doped GaSb crystals

被引：5

作者：

Hidalgo, P

Méndez, B

Piqueras, J

Plaza, J

Diéguez, E

机构：

[1] Univ Complutense Madrid, Fac Fis, Dept Fis Mat, E-28040 Madrid, Spain

[2] Univ Autonoma Madrid, Dept Fis Mat, E-28049 Madrid, Spain

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 03期

关键词：

D O I：

10.1063/1.370910

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Er doped GaSb single crystals have been studied by scanning tunneling spectroscopy (STS) and cathodoluminescence (CL) in a combined scanning electron microscope-scanning tunnelling microscope system. The surface band gap in doped samples has been found to be about 0.5 eV while in undoped crystals the gap is close to the bulk value. Inhomogeneities in the local electronic properties of the doped crystals are studied by a correlation of the CL images and STS data. (C) 1999 American Institute of Physics. [S0021-8979(99)09715-7].

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页码：1449 / 1451

页数：3

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