学术探索
学术期刊
新闻热点
数据分析
智能评审

Optical and electrical properties of ZnMnO layers grown by peroxide MBE

被引：31
作者：
Avrutin, V
Izyumskaya, N
Özgür, Ü
El-Shaer, A
Lee, H
Schoch, W
Reuss, F
Beshenkov, VG
Pustovit, AN
Mofor, AC
Bakin, A
Morkoç, H
Waag, A
机构：
[1] Kyung Hee Univ, Dept Phys, Suwon 449701, South Korea
[2] Univ Ulm, Dept Semicond Phys, D-89081 Ulm, Germany
[3] Tech Univ Braunschweig, Inst Semicond Technol, D-38106 Braunschweig, Germany
[4] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Moscow Region, Russia
[5] Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA 23284 USA
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2006年 / 39卷 / 1-4期
关键词：
zinc oxide ZnO; ZnMnO; diluted magnetic semiconductors DMS; band gap; photoluminescence; optical absorption; molecular beam epitaxy MBE;
D O I：
10.1016/j.spmi.2005.08.051
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We studied the structural and electronic properties of Zn1-xMnxO (0 < x < 0.5) layers grown by peroxide molecular beam epitaxy. Hall effect measurements showed that the layers were highly resistive, pointing to strong electrical compensation of the Zn1-xMnxO films by Mn incorporation. The lattice parameter c was found to increase linearly with increasing x for low Mn concentrations and tended to saturate for heavily doped Films (x >= 0.2), Suggesting a possible second-phase precipitation. Optical transmission measurements revealed an increase in the band gap of Zn1-xMnxO and an enhancement of the broad below-band-gap absorption associated with Mn ions with increasing Mn content. However, no blueshift in the near-band-edge emission was detected in the photoluminescence spectra. (C) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：291 / 298
页数：8
相关论文
共 12 条
[1]   Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J].
Dietl, T ;
Ohno, H ;
Matsukura, F ;
Cibert, J ;
Ferrand, D .
SCIENCE, 2000, 287 (5455) :1019-1022
[2]   Formation of two-dimensional electron gas and the magnetotransport behavior of ZnMnO/ZnO heterostructure [J].
Edahiro, T ;
Fujimura, N ;
Ito, T .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (10) :7673-7675
[3]   An oxide-diluted magnetic semiconductor: Mn-doped ZnO [J].
Fukumura, T ;
Jin, ZW ;
Ohtomo, A ;
Koinuma, H ;
Kawasaki, M .
APPLIED PHYSICS LETTERS, 1999, 75 (21) :3366-3368
[4]   FE3+ CENTER IN ZNO [J].
HEITZ, R ;
HOFFMANN, A ;
BROSER, I .
PHYSICAL REVIEW B, 1992, 45 (16) :8977-8988
[5]   Molecular beam epitaxy of high-quality ZnO using hydrogen peroxide as an oxidant [J].
Izyumskaya, N ;
Avrutin, V ;
Schoch, W ;
El-Shaer, A ;
Reuss, F ;
Gruber, T ;
Waag, A .
JOURNAL OF CRYSTAL GROWTH, 2004, 269 (2-4) :356-361
[6]   Blue and ultraviolet cathodoluminescence from Mn-doped epitaxial ZnO thin films [J].
Jin, ZW ;
Yoo, YZ ;
Sekiguchi, T ;
Chikyow, T ;
Ofuchi, H ;
Fujioka, H ;
Oshima, M ;
Koinuma, H .
APPLIED PHYSICS LETTERS, 2003, 83 (01) :39-41
[7]   Ferromagnetic properties of Zn1-xMnxO epitaxial thin films [J].
Jung, SW ;
An, SJ ;
Yi, GC ;
Jung, CU ;
Lee, SI ;
Cho, S .
APPLIED PHYSICS LETTERS, 2002, 80 (24) :4561-4563
[8]   Properties of mn and co implanted ZnO crystals [J].
Polyakov, AY ;
Govorkov, AV ;
Smirnov, NB ;
Pashkova, NV ;
Pearton, SJ ;
Overberg, ME ;
Abernathy, CR ;
Norton, DP ;
Zavada, JM ;
Wilson, RG .
SOLID-STATE ELECTRONICS, 2003, 47 (09) :1523-1531
[9]   Magnetic properties of Mn doped ZnO tetrapod structures [J].
Roy, VAL ;
Djurisic, AB ;
Liu, H ;
Zhang, XX ;
Leung, YH ;
Xie, MH ;
Gao, J ;
Lui, HF ;
Surya, C .
APPLIED PHYSICS LETTERS, 2004, 84 (05) :756-758
[10]   Excitonic fine structure and recombination dynamics in single-crystalline ZnO -: art. no. 195207 [J].
Teke, A ;
Özgür, Ü ;
Dogan, S ;
Gu, X ;
Morkoç, H ;
Nemeth, B ;
Nause, J ;
Everitt, HO .
PHYSICAL REVIEW B, 2004, 70 (19) :1-10
12