Experimental and Theoretical Analysis of Hole Transport in Uniaxially Strained pMOSFETs

被引：7

作者：

Huet, K. ^{[1
,2
]}

Feraille, A. ^{[2
]}

Rideau, D. ^{[2
]}

Delamare, R. ^{[3
]}

Aubry-Fortuna, V. ^{[1
]}

Kasbari, M. ^{[3
]}

Blayac, S. ^{[3
]}

Rivero, C. ^{[4
]}

Bournel, A. ^{[1
]}

Tavernier, C. ^{[2
]}

Dollfus, P. ^{[1
]}

Jaouen, H. ^{[2
]}

机构：

[1] Univ Paris 11, CNRS, Inst Elect Fondamentale, F-91405 Orsay, France

[2] STMicroelect, F-38926 Crolles, France

[3] Ctr Microelect Provence, Ecole Mines St Etienne, F-13541 Gardanne, France

[4] ST Microelect, F-13106 Rousset, France

来源：

ESSDERC 2008: PROCEEDINGS OF THE 38TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2008年

关键词：

D O I：

10.1109/ESSDERC.2008.4681741

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new wafer bending experiment reports hole mobility variations in pMOS devices with uniaxial stress applied along the < 110 >, <-110 > and < 100 > directions. Our results have been interpreted using Kubo-Greenwood (KG) formalism. Mobilities were calculated using the usual 3DHG KG formula, but also using a 2DHG calculation. The latter, that accounts for quantum confinement due to the transverse field, is based on a fully self-consistent Poisson-kp-Schrodinger scheme. This 2DHG approach appears to be mandatory for an accurate description of transport properties in strained inversion layers.

引用

页码：234 / +

页数：2

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