Growth of large-scale vertically aligned GaN nanowires and their heterostructures with high uniformity on SiOx by catalyst-free molecular beam epitaxy

被引：76

作者：

Zhao, S. ^{[1
]}

Kibria, M. G. ^{[1
]}

Wang, Q. ^{[1
]}

Nguyen, H. P. T. ^{[1
]}

Mi, Z. ^{[1
]}

机构：

[1] McGill Univ, Dept Elect & Comp Engn, Montreal, PQ H3A 2A7, Canada

来源：

NANOSCALE | 2013年 / 5卷 / 12期

基金：

加拿大自然科学与工程研究理事会;

关键词：

LIGHT-EMITTING-DIODES; SEMICONDUCTOR NANOWIRES; VAPOR-DEPOSITION; ELECTRONICS; NUCLEATION; MECHANISM; PHOTONICS; SI(111); GLASS; ZNO;

D O I：

10.1039/c3nr00387f

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The catalyst-free molecular beam epitaxial growth of GaN nanowires and their heterostructures on a SiOx template is studied in detail. It was found that by optimizing the growth temperature, highly uniform and vertically aligned GaN nanowires and InGaN/GaN heterostructures with excellent optical properties can be obtained on a SiOx template in a large-scale. This work provides an entirely new avenue for GaN nanowire based optoelectronic devices.

引用

页码：5283 / 5287

页数：5

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