Transparent polymer Schottky contact for a high performance visible-blind ultraviolet photodiode based on ZnO

被引：121

作者：

Nakano, M. ^{[1
]}

Makino, T. ^{[2
]}

Tsukazaki, A. ^{[1
]}

Ueno, K. ^{[2
]}

Ohtomo, A. ^{[1
]}

Fukumura, T. ^{[1
]}

Yuji, H. ^{[3
]}

Akasaka, S. ^{[3
]}

Tamura, K. ^{[3
]}

Nakahara, K. ^{[3
]}

Tanabe, T. ^{[3
]}

Kamisawa, A. ^{[3
]}

Kawasaki, M. ^{[1
,2
,4
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan

[3] ROHM Co Ltd, Adv Compound Semicond R&D Ctr, Kyoto 6158585, Japan

[4] Japan Sci & Technol Agcy, CREST, Tokyo 1020075, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 12期

基金：

日本学术振兴会;

关键词：

D O I：

10.1063/1.2989125

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a high performance visible-blind Schottky ultraviolet photodiode composed of a ZnO (0001) bulk single crystal and a transparent conducting polymer, poly (3,4-ethylenedioxythiophene) poly (styrenesulfonate), fabricated with a simple spin-coating process at room temperature in air. The quantum efficiency as high as unity in ultraviolet region and a visible rejection ratio of about 10(3) were achieved in the spectral response of the photodiode under zero-bias condition. The normalized detectivity of the photodiode was evaluated to be 3.6 x 10(14) cm Hz(1/2)/W at 370 nm. (C) 2008 American Institute of Physics.

引用

页数：3

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