Resistive Switching and Memory Effect Based on CuSCN Complex Layer Created Through Interface Reactions

被引：10

作者：

Dong, Yuan-Wei ^{[1
]}

Ji, Xin ^{[1
]}

Xu, Wei ^{[1
]}

Tang, Jia-Qi ^{[1
]}

Guo, Peng ^{[1
]}

机构：

[1] Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2009年 / 12卷 / 03期

基金：

美国国家科学基金会;

关键词：

THIN-FILMS; CONDUCTANCE; ELECTROLYTE; COPOLYMER; OXIDATION;

D O I：

10.1149/1.3049865

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The preparation of copper (I) thiocyanate composite layers through vacuum evaporation of potassium thiocyanate onto a copper layer was investigated. The formation of CuSCN composite film was characterized, and plausible interface reactions were suggested. The Cu/CuSCN composite layer/Al cell exhibited reversible electrical bistability, with an on/off ratio of 10(5)-10(6). The resistive switch mechanism was interpreted with the formation-rupture multifilament model through electrochemical reactions. The low- and high-resistance states follow ohmic conduction and trap-charge-limited conduction, respectively. The CuSCN medium layer and the interface between CuSCN and Cu electrode are proposed to be responsible for nonvolatile memory effect. (C) 2008 The Electrochemical Society. [DOI: 10.1149/1.3049865] All rights reserved.

引用

页码：H54 / H57

页数：4

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