Solvatochromic Effect on the Photoluminescence of MoS2 Monolayers

被引：139

作者：

Mao, Nannan ^{[1
,2
]}

Chen, Yanfeng ^{[1
]}

Liu, Dameng ^{[3
]}

Zhang, Jin ^{[2
]}

Xie, Liming ^{[1
]}

机构：

[1] Chinese Acad Sci, Key Lab Standardizat & Measurement Nanotechnol, Natl Ctr Nanosci & Technol, Beijing 100190, Peoples R China

[2] Peking Univ, State Key Lab Struct Chem Unstable & Stable Speci, Key Lab Phys & Chem Nanodevices, Ctr Nanochem,Beijing Natl Lab Mol Sci,Coll Chem &, Beijing 100871, Peoples R China

[3] Tsinghua Univ, State Key Lab Tribol, Dept Precis Instruments & Mechanol, Beijing 100084, Peoples R China

来源：

SMALL | 2013年 / 9卷 / 08期

关键词：

monolayers; photoluminescence; Raman spectroscopy; solvatochromism; solvent effects; VALLEY POLARIZATION; INTEGRATED-CIRCUITS; SOLVENT POLARITY; GRAPHENE FILMS; LARGE-AREA; SHIFTS;

D O I：

10.1002/smll.201202982

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The effect of surrounding solvents on the photoluminescence (PL) of MoS2 monolayers on Si/SiO2 substrates is studied. A redshift (up to -60 meV) is observed for MoS2 monolayers with nonhalogenated solvent surroundings. A blueshift (up to 60 meV) and intensity increase (2-50 times) are observed for monolayers with halogenated solvent surroundings. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1312 / 1315

页数：4

共 46 条

[21] Fabrication of Single- and Multilayer MoS2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature [J].

Li, Hai ;

Yin, Zongyou ;

He, Qiyuan ;

Li, Hong ;

Huang, Xiao ;

Lu, Gang ;

Fam, Derrick Wen Hui ;

Tok, Alfred Iing Yoong ;

Zhang, Qing ;

Zhang, Hua .

SMALL, 2012, 8 (01) :63-67

[22] Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils [J].

Li, Xuesong ;

Cai, Weiwei ;

An, Jinho ;

Kim, Seyoung ;

Nah, Junghyo ;

Yang, Dongxing ;

Piner, Richard ;

Velamakanni, Aruna ;

Jung, Inhwa ;

Tutuc, Emanuel ;

Banerjee, Sanjay K. ;

Colombo, Luigi ;

Ruoff, Rodney S. .

SCIENCE, 2009, 324 (5932) :1312-1314

[23] Mobility enhancement and highly efficient gating of monolayer MoS2 transistors with polymer electrolyte [J].

Lin, Ming-Wei ;

Liu, Lezhang ;

Lan, Qing ;

Tan, Xuebin ;

Dhindsa, Kulwinder S. ;

Zeng, Peng ;

Naik, Vaman M. ;

Cheng, Mark Ming-Cheng ;

Zhou, Zhixian .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2012, 45 (34)

[24] Wafer-Scale Graphene Integrated Circuit [J].

Lin, Yu-Ming ;

Valdes-Garcia, Alberto ;

Han, Shu-Jen ;

Farmer, Damon B. ;

Meric, Inanc ;

Sun, Yanning ;

Wu, Yanqing ;

Dimitrakopoulos, Christos ;

Grill, Alfred ;

Avouris, Phaedon ;

Jenkins, Keith A. .

SCIENCE, 2011, 332 (6035) :1294-1297

[25] Atomically Thin MoS2: A New Direct-Gap Semiconductor [J].

Mak, Kin Fai ;

Lee, Changgu ;

Hone, James ;

Shan, Jie ;

Heinz, Tony F. .

PHYSICAL REVIEW LETTERS, 2010, 105 (13)

[26]

Mak KF, 2012, NAT NANOTECHNOL, V7, P494, DOI [10.1038/nnano.2012.96, 10.1038/NNANO.2012.96]

[27] Two-dimensional atomic crystals [J].

Novoselov, KS ;

Jiang, D ;

Schedin, F ;

Booth, TJ ;

Khotkevich, VV ;

Morozov, SV ;

Geim, AK .

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2005, 102 (30) :10451-10453

[28] Electric field effect in atomically thin carbon films [J].

Novoselov, KS ;

Geim, AK ;

Morozov, SV ;

Jiang, D ;

Zhang, Y ;

Dubonos, SV ;

Grigorieva, IV ;

Firsov, AA .

SCIENCE, 2004, 306 (5696) :666-669

[29] Single-layer MoS2 transistors [J].

Radisavljevic, B. ;

Radenovic, A. ;

Brivio, J. ;

Giacometti, V. ;

Kis, A. .

NATURE NANOTECHNOLOGY, 2011, 6 (03) :147-150

[30] Integrated Circuits and Logic Operations Based on Single-Layer MoS2 [J].

Radisavljevic, Branimir ;

Whitwick, Michael Brian ;

Kis, Andras .

ACS NANO, 2011, 5 (12) :9934-9938

← 1 2 3 4 5 →