Mobility enhancement and highly efficient gating of monolayer MoS2 transistors with polymer electrolyte

被引：127

作者：

Lin, Ming-Wei ^{[1
]}

Liu, Lezhang ^{[1
]}

Lan, Qing ^{[1
]}

Tan, Xuebin ^{[2
]}

Dhindsa, Kulwinder S. ^{[1
]}

Zeng, Peng ^{[2
]}

Naik, Vaman M. ^{[3
]}

Cheng, Mark Ming-Cheng ^{[2
]}

Zhou, Zhixian ^{[1
]}

机构：

[1] Wayne State Univ, Dept Phys & Astron, Detroit, MI 48201 USA

[2] Wayne State Univ, Dept Elect & Comp Engn, Detroit, MI 48202 USA

[3] Univ Michigan, Dept Nat Sci, Dearborn, MI 48128 USA

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2012年 / 45卷 / 34期

基金：

美国国家科学基金会;

关键词：

GRAPHENE; SCATTERING; TRANSPORT;

D O I：

10.1088/0022-3727/45/34/345102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report electrical characterization of monolayer molybdenum disulfide (MoS2) devices using a thin layer of polymer electrolyte (PE) consisting of poly(ethylene oxide) (PEO) and lithium perchlorate (LiClO4) as both a contact-barrier reducer and channel mobility booster. We find that bare MoS2 devices (without PE) fabricated on Si/SiO2 have low channel mobility and large contact resistance, both of which severely limit the field-effect mobility of the devices. A thin layer of PEO/LiClO4 deposited on top of the devices not only substantially reduces the contact resistance but also boost the channel mobility, leading up to three-orders-of-magnitude enhancement of the field-effect mobility of the device. When the PE is used as a gate medium, the MoS2 field-effect transistors exhibit excellent device characteristics such as a near ideal subthreshold swing and an on/off ratio of 10(6) as a result of the strong gate-channel coupling.

引用

页数：6

共 29 条

[1] High-Throughput Synthesis of Graphene by Intercalation - Exfoliation of Graphite Oxide and Study of Ionic Screening in Graphene Transistor [J].

Ang, Priscilla Kailian ;

Wang, Shuai ;

Bao, Qiaoliang ;

Thong, John T. L. ;

Loh, Kian Ping .

ACS NANO, 2009, 3 (11) :3587-3594

[2] Ultrahigh electron mobility in suspended graphene [J].

Bolotin, K. I. ;

Sikes, K. J. ;

Jiang, Z. ;

Klima, M. ;

Fudenberg, G. ;

Hone, J. ;

Kim, P. ;

Stormer, H. L. .

SOLID STATE COMMUNICATIONS, 2008, 146 (9-10) :351-355

[3] Temperature-dependent transport in suspended graphene [J].

Bolotin, K. I. ;

Sikes, K. J. ;

Hone, J. ;

Stormer, H. L. ;

Kim, P. .

PHYSICAL REVIEW LETTERS, 2008, 101 (09)

[4] Dielectric Screening Enhanced Performance in Graphene FET [J].

Chen, Fang ;

Xia, Jilin ;

Ferry, David K. ;

Tao, Nongjian .

NANO LETTERS, 2009, 9 (07) :2571-2574

[5] Ionic Screening of Charged-Impurity Scattering in Graphene [J].

Chen, Fang ;

Xia, Jilin ;

Tao, Nongjian .

NANO LETTERS, 2009, 9 (04) :1621-1625

[6] Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor [J].

Das, A. ;

Pisana, S. ;

Chakraborty, B. ;

Piscanec, S. ;

Saha, S. K. ;

Waghmare, U. V. ;

Novoselov, K. S. ;

Krishnamurthy, H. R. ;

Geim, A. K. ;

Ferrari, A. C. ;

Sood, A. K. .

NATURE NANOTECHNOLOGY, 2008, 3 (04) :210-215

[7] Boron nitride substrates for high-quality graphene electronics [J].

Dean, C. R. ;

Young, A. F. ;

Meric, I. ;

Lee, C. ;

Wang, L. ;

Sorgenfrei, S. ;

Watanabe, K. ;

Taniguchi, T. ;

Kim, P. ;

Shepard, K. L. ;

Hone, J. .

NATURE NANOTECHNOLOGY, 2010, 5 (10) :722-726

[8] Approaching ballistic transport in suspended graphene [J].

Du, Xu ;

Skachko, Ivan ;

Barker, Anthony ;

Andrei, Eva Y. .

NATURE NANOTECHNOLOGY, 2008, 3 (08) :491-495

[9] MOBILITY OF CHARGE CARRIERS IN SEMICONDUCTING LAYER STRUCTURES [J].

FIVAZ, R ;

MOOSER, E .

PHYSICAL REVIEW, 1967, 163 (03) :743-&

[10]

Ghatak S, 2011, ACS NANO, V5, P7707, DOI [10.1021/nn202852J, 10.1021/nn202852j]

← 1 2 3 →