Mobility enhancement and highly efficient gating of monolayer MoS2 transistors with polymer electrolyte

被引：127

作者：

Lin, Ming-Wei ^{[1
]}

Liu, Lezhang ^{[1
]}

Lan, Qing ^{[1
]}

Tan, Xuebin ^{[2
]}

Dhindsa, Kulwinder S. ^{[1
]}

Zeng, Peng ^{[2
]}

Naik, Vaman M. ^{[3
]}

Cheng, Mark Ming-Cheng ^{[2
]}

Zhou, Zhixian ^{[1
]}

机构：

[1] Wayne State Univ, Dept Phys & Astron, Detroit, MI 48201 USA

[2] Wayne State Univ, Dept Elect & Comp Engn, Detroit, MI 48202 USA

[3] Univ Michigan, Dept Nat Sci, Dearborn, MI 48128 USA

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2012年 / 45卷 / 34期

基金：

美国国家科学基金会;

关键词：

GRAPHENE; SCATTERING; TRANSPORT;

D O I：

10.1088/0022-3727/45/34/345102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report electrical characterization of monolayer molybdenum disulfide (MoS2) devices using a thin layer of polymer electrolyte (PE) consisting of poly(ethylene oxide) (PEO) and lithium perchlorate (LiClO4) as both a contact-barrier reducer and channel mobility booster. We find that bare MoS2 devices (without PE) fabricated on Si/SiO2 have low channel mobility and large contact resistance, both of which severely limit the field-effect mobility of the devices. A thin layer of PEO/LiClO4 deposited on top of the devices not only substantially reduces the contact resistance but also boost the channel mobility, leading up to three-orders-of-magnitude enhancement of the field-effect mobility of the device. When the PE is used as a gate medium, the MoS2 field-effect transistors exhibit excellent device characteristics such as a near ideal subthreshold swing and an on/off ratio of 10(6) as a result of the strong gate-channel coupling.

引用

页数：6

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