High-performance amorphous gallium indium zinc oxide thin-film transistors through N2O plasma passivation

被引：118

作者：

Park, Jaechul ^{[1
]}

Kim, Sangwook ^{[1
]}

Kim, Changjung ^{[1
]}

Kim, Sunil ^{[1
]}

Song, Ihun ^{[1
]}

Yin, Huaxiang ^{[1
]}

Kim, Kyoung-Kok ^{[1
]}

Lee, Sunghoon ^{[1
]}

Hong, Kiha ^{[1
]}

Lee, Jaecheol ^{[2
]}

Jung, Jaekwan ^{[2
]}

Lee, Eunha ^{[2
]}

Kwon, Kee-Won ^{[3
]}

Park, Youngsoo ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Semicond Device Lab, Yongin, Gyeonggi Do, South Korea

[2] Samsung Adv Inst Technol, Analyt Engn Ctr, Yongin, Gyeonggi Do, South Korea

[3] Sungkyunkwan Univ, Dept Semicond Syst Engn, Suwon 440746, Gyeonggi Do, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 05期

关键词：

D O I：

10.1063/1.2962985

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphous-gallium-indium-zinc-oxide (a-GIZO) thin filmtransistors (TFTs) are fabricated without annealing, using processes and equipment for conventional a-Si:H TFTs. It has been very difficult to obtain sound TFT characteristics, because the a-GIZO active layer becomes conductive after dry etching the Mo source/drain electrode and depositing the a-SiO2 passivation layer. To prevent such damages, N2O plasma is applied to the back surface of the a-GIZO channel layer before a-SiO2 deposition. N2O plasma-treated a-GIZO TFTs exhibit excellent electrical properties: a field effect mobility of 37 cm(2)/V s, a threshold voltage of 0.1 V, a subthreshold swing of 0.25 V/decade, and an I-on/off ratio of 7. (C) 2008 American Institute of Physics.

引用

页数：3

共 16 条

[1] High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer [J].

Chiang, HQ ;

Wager, JF ;

Hoffman, RL ;

Jeong, J ;

Keszler, DA .

APPLIED PHYSICS LETTERS, 2005, 86 (01) :013503-1

[2] Transparent thin-film transistors with zinc indium oxide channel layer [J].

Dehuff, NL ;

Kettenring, ES ;

Hong, D ;

Chiang, HQ ;

Wager, JF ;

Hoffman, RL ;

Park, CH ;

Keszler, DA .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (06)

[3] Fully transparent ZnO thin-film transistor produced at room temperature [J].

Fortunato, EMC ;

Barquinha, PMC ;

Pimentel, ACMBG ;

Gonçalves, AMF ;

Marques, AJS ;

Pereira, LMN ;

Martins, RFP .

ADVANCED MATERIALS, 2005, 17 (05) :590-+

[4] ZnO-based transparent thin-film transistors [J].

Hoffman, RL ;

Norris, BJ ;

Wager, JF .

APPLIED PHYSICS LETTERS, 2003, 82 (05) :733-735

[5] Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules [J].

Kang, Donghun ;

Lim, Hyuck ;

Kim, Changjung ;

Song, Ihun ;

Park, Jaechoel ;

Park, Youngsoo ;

Chung, JaeGwan .

APPLIED PHYSICS LETTERS, 2007, 90 (19)

[6]

KIM C, 2006, INT EL DEV M, V307

[7] Room temperature fabricated ZnO thin film transistor using high-K Bi1.5Zn1.0Nb1.5O7 gate insulator prepared by sputtering [J].

Kim, Il-Doo ;

Lim, Mi-Hwa ;

Kang, KyongTae ;

Kim, Ho-Gi ;

Choi, Si-Young .

APPLIED PHYSICS LETTERS, 2006, 89 (02)

[8]

KIM S, 2007, P MAT RES SOC UNPUB, V348

[9] Enhancement-mode thin-film field-effect transistor using phosphorus-doped (Zn,Mg)O channel [J].

Kwon, Y ;

Li, Y ;

Heo, YW ;

Jones, M ;

Holloway, PH ;

Norton, DP ;

Park, ZV ;

Li, S .

APPLIED PHYSICS LETTERS, 2004, 84 (14) :2685-2687

[10] Progress in semiconducting oxide-based thin-film transistors for displays [J].

Li, YJ ;

Kwon, YW ;

Jones, M ;

Heo, YW ;

Zhou, J ;

Luo, SC ;

Holloway, PH ;

Douglas, E ;

Norton, DP ;

Park, Z ;

Li, S .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (08) :720-725

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