TiO2 atomic layer deposition on ZrO2 particles using alternating exposures of TiCl4 and H2O

被引:94
作者
Ferguson, JD
Yoder, AR
Weimer, AW
George, SM [1 ]
机构
[1] Univ Colorado, Dept Chem & Biochem, Boulder, CO 80309 USA
[2] Univ Colorado, Dept Chem & Biol Engn, Boulder, CO 80309 USA
基金
美国国家科学基金会;
关键词
atomic layer deposition; FTIR; particles; reaction cycles; TiO2; ZrO2;
D O I
10.1016/j.apsusc.2003.10.053
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
TiO2 was deposited with atomic layer control on ZrO2 particles using alternating exposures of TiCl4 and H2O. Transmission Fourier transform infrared (FTIR) spectroscopy was used to monitor the sequential surface chemistry in vacuum. The ZrO2 particles initially displayed vibrational modes consistent with ZrOH* surface species. TiCl4 exposure at 600 K removed the surface hydroxyls and subsequent H2O exposure at 600 K produced TiOH* surface species. Repeating the TiCl4 and H2O exposures in an ABAB... reaction sequence deposited TiO2 with atomic layer control. The intensity of the bulk vibrational modes for TiO2 increased with the number of AB reaction cycles. The ZrO2 particles after TiO2 deposition were examined with transmission electron microscopy (TEM). The TEM images revealed ZrO2 particles encapsulated by conformal TiO2 films with a thickness of similar to16 Angstrom after 40 AB reaction cycles. These TEM images are consistent with a TiO2 atomic layer deposition (ALD) growth rate at 600 K of 0.4 Angstrom/AB cycle. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:393 / 404
页数:12
相关论文
共 56 条
[1]   Ruthenium thin films grown by atomic layer deposition [J].
Aaltonen, T ;
Alén, P ;
Ritala, M ;
Leskelä, M .
CHEMICAL VAPOR DEPOSITION, 2003, 9 (01) :45-49
[2]   Atomic-layer growth of TiO2-II thin films [J].
Aarik, J ;
Aidla, A ;
Uustare, T .
PHILOSOPHICAL MAGAZINE LETTERS, 1996, 73 (03) :115-119
[3]   Control of thin film structure by reactant pressure in atomic layer deposition of TiO2 [J].
Aarik, J ;
Aidla, A ;
Sammelselg, V ;
Siimon, H ;
Uustare, T .
JOURNAL OF CRYSTAL GROWTH, 1996, 169 (03) :496-502
[4]   Titanium isopropoxide as a precursor for atomic layer deposition:: characterization of titanium dioxide growth process [J].
Aarik, J ;
Aidla, A ;
Uustare, T ;
Ritala, M ;
Leskelä, M .
APPLIED SURFACE SCIENCE, 2000, 161 (3-4) :385-395
[5]   MORPHOLOGY AND STRUCTURE OF TIO2 THIN-FILMS GROWN BY ATOMIC LAYER DEPOSITION [J].
AARIK, J ;
AIDLA, A ;
UUSTARE, T ;
SAMMELSELG, V .
JOURNAL OF CRYSTAL GROWTH, 1995, 148 (03) :268-275
[6]   Effect of growth conditions on formation of TiO2-II thin films in atomic layer deposition process [J].
Aarik, J ;
Aidla, A ;
Sammelselg, V ;
Uustare, T .
JOURNAL OF CRYSTAL GROWTH, 1997, 181 (03) :259-264
[7]   Influence of structure development on atomic layer deposition of TiO2 thin films [J].
Aarik, J ;
Karlis, J ;
Mändar, H ;
Uustare, T ;
Sammelselg, V .
APPLIED SURFACE SCIENCE, 2001, 181 (3-4) :339-348
[8]   Effect of crystal structure on optical properties of TiO2 films grown by atomic layer deposition [J].
Aarik, J ;
Aidla, A ;
Kiisler, AA ;
Uustare, T ;
Sammelselg, V .
THIN SOLID FILMS, 1997, 305 (1-2) :270-273
[9]   Atomic layer deposition of titanium dioxide from TiCl4 and H2O:: investigation of growth mechanism [J].
Aarik, J ;
Aidla, A ;
Mändar, H ;
Uustare, T .
APPLIED SURFACE SCIENCE, 2001, 172 (1-2) :148-158
[10]   Anomalous effect of temperature on atomic layer deposition of titanium dioxide [J].
Aarik, J ;
Aidla, A ;
Mändar, H ;
Sammelselg, V .
JOURNAL OF CRYSTAL GROWTH, 2000, 220 (04) :531-537