Low Temperature Synthesis of Vertically Aligned Carbon Nanotubes with Electrical Contact to Metallic Substrates Enabled by Thermal Decomposition of the Carbon Feedstock

被引：132

作者：

Nessim, Gilbert D. ^{[1
]}

Seita, Matteo ^{[1
]}

O'Brien, Kevin P. ^{[2
]}

Hart, A. John ^{[3
]}

Bonaparte, Ryan K. ^{[1
]}

Mitchell, Robert R. ^{[1
]}

Thompson, Carl V. ^{[1
]}

机构：

[1] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

[2] Intel Corp, Components Res Dept, Hillsboro, OR 97124 USA

[3] Univ Michigan, Dept Mech Engn, Ann Arbor, MI 48109 USA

来源：

NANO LETTERS | 2009年 / 9卷 / 10期

关键词：

CHEMICAL-VAPOR-DEPOSITION; GROWTH; ARRAYS; NUCLEATION; TRANSPORT; DENSE;

D O I：

10.1021/nl900675d

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Growth of vertically aligned carbon nanotube (CNT) carpets on metallic substrates at low temperatures was achieved by controlled thermal treatment of ethylene and hydrogen at a temperature higher than the substrate temperature. High-resolution transmission electron microscopy showed that nanotubes were crystalline for a preheating temperature of 770 degrees C and a substrate temperature of 500 degrees C. Conductive atomic force microscopy measurements indicated electrical contact through the CNT carpet to the metallic substrate with an approximate resistance of 35 W for multiwall carpets taller than two micrometers. An analysis of the activation energies indicated that thermal decomposition of the hydrocarbon/hydrogen gas mixture was the rate-limiting step for low-temperature chemical vapor deposition growth of CNTs. These results represent a significant advance toward the goal of replacing copper Interconnects with nanotubes using CMOS-compatible processes.

引用

页码：3398 / 3405

页数：8

共 43 条

[1] Carbon nanotube via interconnect technologies: size-classified catalyst nanoparticles and low-resistance ohmic contact formation [J].