Self-assembling CdTe quantum dots on ZnSe by alternate supplying and molecular beam epitaxial method

被引：10

作者：

Matsumura, N ^{[1
]}

Kimura, Y ^{[1
]}

Endo, H ^{[1
]}

Saraie, J ^{[1
]}

机构：

[1] Kyoto Inst Technol, Fac Engn & Design, Dept Elect & Informat Sci, Kyoto 6068585, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 214卷 / 214期

关键词：

CdTe; quantum dot; alternate supply; MBE; self-assembling; Volmer-Weber mode;

D O I：

10.1016/S0022-0248(00)00180-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Self-assembling CdTe quantum dots were grown on ZnSe epilayers by alternate supplying and molecular beam epitaxial methods. RHEED observation implies that the growth mode of CdTe on ZnSe was the Volmer-Weber one owing to the large lattice mismatch between CdTe and ZnSe. Temperature dependence of photoluminescence spectra suggested that the emissions originated from quantum dots. The emission wavelength increased with increasing the supplied amount of source materials and with decreasing the growth temperature. The influence of these growth parameters on the dot formation is discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：694 / 697

页数：4

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