Emitter series resistance effect of multiple heterojunction contacts for Pnp heterojunction bipolar transistors

被引：4

作者：

Datta, S ^{[1
]}

Roenker, KP ^{[1
]}

Cahay, MM ^{[1
]}

机构：

[1] Univ Cincinnati, Dept Elect & Comp Engn & Comp Sci, Cincinnati, OH 45221 USA

来源：

SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 07期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/S0038-1101(99)00117-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For InP-based Pnp heterojunction bipolar transistors (HBTs), a set of epitaxial layers, frequently incorporating quaternaries, is used to make a low resistance electrical contact to the emitter layer. We describe an analytical approach to investigate the nonlinear effects of the multiple heterojunction interfaces on the emitter series resistance and emitter junction current-voltage characteristics of the device. The simulation results show that heterojunction interfaces can contribute a substantial portion (up to 20%) to the total emitter series resistance, especially at high levels of emitter current. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：1299 / 1305

页数：7

共 13 条

[1] MATERIAL PARAMETERS OF IN1-XGAXASYP1-Y AND RELATED BINARIES [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8775-8792

[2]

BOER KW, 1992, SURVEY SEMICONDUCTOR, V2, P357

[3] Hole transport and quasi-Fermi level splitting at the emitter-base junction in Pnp heterojunction bipolar transistors [J].

Datta, S ;

Roenker, KP ;

Cahay, MM .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (03) :1949-1955

[4] A thermionic-emission-diffusion model for graded base Pnp heterojunction bipolar transistors [J].

Datta, S ;

Roenker, KP ;

Cahay, MM .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (12) :8036-8045

[5] Importance of the spin-orbit split-off band on the tunneling properties of holes through AlxGa1-xAs/GaAs and InP/InyGa1-yAs heterostructures [J].

Ekbote, S ;

Cahay, M ;

Roenker, K .

PHYSICAL REVIEW B, 1998, 58 (24) :16315-16325

[6]

JALALI B, 1995, INP HBT GROWTH PROCE, P229

[7]

KULKE B, 1957, P IRE, V45, P90

[8] HIGH-SPEED, HIGH-CURRENT-GAIN P-N-P INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

LUNARDI, LM ;

CHANDRASEKHAR, S ;

HAMM, RA .

IEEE ELECTRON DEVICE LETTERS, 1993, 14 (01) :19-21

[9] METHOD FOR DETERMINING THE EMITTER AND BASE SERIES RESISTANCES OF BIPOLAR-TRANSISTORS [J].

NING, TH ;

TANG, DD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (04) :409-412

[10] CHARACTERIZATION AND MEASUREMENT OF BASE AND EMITTER RESISTANCES OF BIPOLAR TRANSISTORS [J].

SANSEN, WMC ;

MEYER, RG .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (06) :492-&

← 1 2 →