GaN-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors with CsF Current-Suppressing Layer

被引：9

作者：

Chen, Chin-Hsiang ^{[1
]}

Tsai, Chia-Ming ^{[1
]}

Cheng, Chung-Fu ^{[1
]}

Yen, Shuo-Fu ^{[1
]}

Su, Peng-Yin ^{[1
]}

Tsai, Yu-Hsuan ^{[1
]}

Tsai, Cheng-Nan ^{[1
]}

机构：

[1] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung 830, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 04期

关键词：

MSM-PHOTODETECTORS; ELECTRON INJECTION; PHOTODIODES; TEMPERATURE; FLUORIDE;

D O I：

10.1143/JJAP.51.04DG15

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN metal-insulator-semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with the CsF current-suppressing layer were, for the first time, fabricated and characterized successfully. It was found that we can achieve a low dark current and large photocurrent-to-dark-current contrast ratio from the proposed devices with the use of the CsF current-suppressing layer. With a 5 V applied bias, it was found that the leakage current of the fabricated MIS PDs with the CsF current-suppressing layer was 7.1 x 10(-10) A. This small leakage current should be attributed to the large barrier height caused by the insertion of the CsF current-suppressing layer. With a 5 V applied bias, the barrier height of Phi(B) = 0.942 can be calculated from the dark current-voltage (I-V) characteristics. We can also achieve a large UV-to-visible rejection ratio from the PDs with the CsF current-suppressing layer. (C) 2012 The Japan Society of Applied Physics

引用

页数：4

共 31 条

[11] RADIOTRACERS IN FLUORINE CHEMISTRY .12. REACTIONS BETWEEN CESIUM FLUORIDE AND ARSENIC PENTAFLUORIDE, BORON-TRIFLUORIDE, SULFUR-TETRAFLUORIDE, CARBONYL FLUORIDE, AND CARBON-DIOXIDE UNDER HETEROGENEOUS CONDITIONS AT ROOM-TEMPERATURE - RADIOTRACER STUDIES USING F-18, S-35, AND C-14 [J].

DIXON, KW ;

WINFIELD, JM .

JOURNAL OF THE CHEMICAL SOCIETY-DALTON TRANSACTIONS, 1989, (05) :937-942

[12] Investigation of interfaces between insulator and active layer, and between active layer and electrodes in n-type organic field-effect transistors [J].

Fukuda, Shohei ;

Kajii, Hirotake ;

Okuya, Hiroshi ;

Ogata, Toshiyuki ;

Takahashi, Motoki ;

Ohmori, Yutaka .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (02) :1307-1310

[13] Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN [J].

Horng, RH ;

Wuu, DS ;

Lien, YC ;

Lan, WH .

APPLIED PHYSICS LETTERS, 2001, 79 (18) :2925-2927

[14] Aluminum based cathode structure for enhanced electron injection in electroluminescent organic devices [J].

Jabbour, GE ;

Kippelen, B ;

Armstrong, NR ;

Peyghambarian, N .

APPLIED PHYSICS LETTERS, 1998, 73 (09) :1185-1187

[15] Demonstration of large active area AlGaN solar-blind Schottky photodiodes with low dark current [J].

Jiang, H. ;

Egawa, T. .

ELECTRONICS LETTERS, 2006, 42 (19) :1120-1122

[16] Surface passivated function of GaAs MSM-PDs using photoelectrochemical oxidation method [J].

Lee, CT ;

Lee, HY .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (02) :462-464

[17] NONLINEAR REFRACTIVE-INDEX OF FLUORIDE-CRYSTALS [J].

MILAM, D ;

WEBER, MJ ;

GLASS, AJ .

APPLIED PHYSICS LETTERS, 1977, 31 (12) :822-825

[18] Assessment of GaN metal-semiconductor-metal photodiodes for high-energy ultraviolet photodetection [J].

Monroy, E ;

Palacios, T ;

Hainaut, O ;

Omnès, F ;

Calle, F ;

Hochedez, JF .

APPLIED PHYSICS LETTERS, 2002, 80 (17) :3198-3200

[19] High-performance GaN p-n junction photodetectors for solar ultraviolet applications [J].

Monroy, E ;

Munoz, E ;

Sanchez, FJ ;

Calle, F ;

Calleja, E ;

Beaumont, B ;

Gibart, P ;

Munoz, JA ;

Cusso, F .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (09) :1042-1046

[20] LARGE-BAND-GAP SIC, III-V NITRIDE, AND II-VI ZNSE-BASED SEMICONDUCTOR-DEVICE TECHNOLOGIES [J].

MORKOC, H ;

STRITE, S ;

GAO, GB ;

LIN, ME ;

SVERDLOV, B ;

BURNS, M .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (03) :1363-1398

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