Stabilizing the ferroelectric phase in doped hafnium oxide

被引：480

作者：

Hoffmann, M. ^{[1
]}

Schroeder, U. ^{[1
]}

Schenk, T. ^{[1
]}

Shimizu, T. ^{[2
]}

Funakubo, H. ^{[2
,3
]}

Sakata, O. ^{[4
]}

Pohl, D. ^{[5
]}

Drescher, M. ^{[6
]}

Adelmann, C. ^{[7
]}

Materlik, R. ^{[8
]}

Kersch, A. ^{[8
]}

Mikolajick, T. ^{[1
,9
]}

机构：

[1] NaMLab gGmbH, D-01187 Dresden, Germany

[2] Tokyo Inst Technol, Mat Res Ctr Element Strategy, Yokohama, Kanagawa 2268503, Japan

[3] Tokyo Inst Technol, Dept Innovat & Engn Mat, Yokohama, Kanagawa 2268502, Japan

[4] Natl Inst Mat Sci NIMS, Synchrotron Xray Stn SPring 8, Sayo, Hyogo 6795148, Japan

[5] Leibniz IFW Dresden, D-01171 Dresden, Germany

[6] Fraunhofer IPMS CNT, D-01099 Dresden, Germany

[7] IMEC, B-3001 Leuven, Belgium

[8] Munich Univ Appl Sci, D-80335 Munich, Germany

[9] Tech Univ Dresden, Chair Nanoelect Mat, D-01062 Dresden, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2015年 / 118卷 / 07期

关键词：

MIM CAPACITORS; FILMS; INTERFACE; BEHAVIOR; IMPACT; ZRO2;

D O I：

10.1063/1.4927805

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The ferroelectric properties and crystal structure of doped HfO2 thin films were investigated for different thicknesses, electrode materials, and annealing conditions. Metal-ferroelectric-metal capacitors containing Gd:HfO2 showed no reduction of the polarization within the studied thickness range, in contrast to hafnia films with other dopants. A qualitative model describing the influence of basic process parameters on the crystal structure of HfO2 was proposed. The influence of different structural parameters on the field cycling behavior was examined. This revealed the wake-up effect in doped HfO2 to be dominated by interface induced effects, rather than a field induced phase transition. TaN electrodes were shown to considerably enhance the stabilization of the ferroelectric phase in HfO2 compared to TiN electrodes, yielding a P-r of up to 35 mu C/cm(2). This effect was attributed to the interface oxidation of the electrodes during annealing, resulting in a different density of oxygen vacancies in the Gd:HfO2 films. Ab initio simulations confirmed the influence of oxygen vacancies on the phase stability of ferroelectric HfO2. (C) 2015 AIP Publishing LLC.

引用

页数：9

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