DC and RF characteristics of RPCVD grown modulation doped Si0.8Ge0.2 pMOSFETs

被引：3

作者：

Song, YJ

Kim, SH

Lee, SH

Bae, HC

Kang, JY

Shim, KH

Kim, JH

Song, JI

机构：

[1] SiGe Divice Team, Wireless Commun Device Res Dept, Elect & Telecommun Res Inst, Taejon 305350, South Korea

[2] Kwangju Inst Sci & Technol, Dept Informat & Commun, Kwangju 500712, South Korea

来源：

SOLID-STATE ELECTRONICS | 2004年 / 48卷 / 02期

关键词：

SiGe; MOSFET; modulation doping; transconductance; cut-off frequency; 1/f noise;

D O I：

10.1016/S0038-1101(03)00317-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Modulation-doped Si0.8Ge0.2 pMOSFETs have been successfully fabricated through a well-controlled boron delta-doping (doses of 1 x 10(12)-5 x 10(12) cm(-2)) by reduced pressure chemical vapor deposition, and their DC and RF characteristics have been investigated. It is seen that the modulation doping, which shifts the hole gas from the Si-cap/ Si0.8Ge0.2 interface to the centrum of the Si0.8Ge0.2 quantum well, effectively improves the device's transconductance (g(m)), driving-current, cut-off frequency (f(T)), and gate-voltage swing, without a degradation in devices' turn-off characteristics. In addition, a reduction in NFmin is observed in the modulation-doped Si0.8Ge0.2 pMOSFETs, responsible for the increased g(m) and the reduced gate capacitance. The 1/f noise in Si0.8Ge0.2 pMOSFETs is also proven to be lower than that of the Si control, regardless of modulation doping. This device design is well suitable for high-speed and low-noise applications. (C) 2003 Elsevier Ltd. All rights reserved.

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页码：315 / 320

页数：6

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