Effect of hydrogen on the electronic properties of InxGa1-xAs1-yNy/GaAs quantum wells -: art. no. 201304

被引：101

作者：

Polimeni, A

Baldassarri, G

Bissiri, HVM

Capizzi, M

Fischer, M

Reinhardt, M

Forchel, A

机构：

[1] Univ Roma La Sapienza, Dipartimento Fis, Ist Nazl Fis Mat, I-00185 Rome, Italy

[2] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.63.201304

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Atomic hydrogen irradiation leads to striking effects on the electronic properties of InxGa1-xAs1-yNy/GaAs single quantum wells as measured by photoluminescence spectroscopy. The InxGa1-xAs1-yNy band-gap energy blueshifts with increasing hydrogen dose and finally saturates at the value of a corresponding reference sample without nitrogen. The luminescence intensity decreases upon hydrogen irradiation with a strong dependence on nitrogen content. The above results have been found in a large set of samples differing For nitrogen and indium content, and are related to the Formation of bonds between hydrogen and one or more nitrogen atoms.

引用

页数：4

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