Design of quantum dot lattices in amorphous matrices by ion beam irradiation

被引:17
作者
Buljan, M. [1 ]
Bogdanovic-Radovic, I. [1 ]
Karlusic, M. [1 ]
Desnica, U. V. [1 ]
Radic, N. [1 ]
Jaksic, M. [1 ]
Salamon, K. [2 ]
Drazic, G. [3 ]
Bernstorff, S. [4 ]
Holy, V. [5 ]
机构
[1] Rudjer Boskovic Inst, HR-10000 Zagreb, Croatia
[2] Inst Phys, HR-10000 Zagreb, Croatia
[3] Jozef Stefan Inst, SLO-1000 Ljubljana, Slovenia
[4] Sincrotrone Trieste, I-34149 Basovizza, Italy
[5] Charles Univ Prague, CZ-12116 Prague, Czech Republic
来源
PHYSICAL REVIEW B | 2011年 / 84卷 / 15期
关键词
SEMICONDUCTOR CLUSTERS; TRACK FORMATION; HEAVY-IONS; NANOCRYSTALS; FABRICATION; CRYSTALS; SIO2;
D O I
10.1103/PhysRevB.84.155312
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on the highly controllable self-assembly of semiconductor quantum dots and metallic nanoparticles in a solid amorphous matrix, induced by ion beam irradiation of an amorphous multilayer. We demonstrate experimentally and theoretically a possibility to tune the basic structural properties of the quantum dots in a wide range. Furthermore, the sizes, distances, and arrangement type of the quantum dots follow simple equations dependent on the irradiation and the multilayer properties. We present a Monte Carlo model for the simulation and prediction of the structural properties of the materials formed by this method. The presented results enable engineering and simple production of functional materials or simple devices interesting for applications in nanotechnology.
引用
收藏
页数:8
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