High Uniformity of Resistive Switching Characteristics in a Cr/ZnO/Pt Device

被引：54

作者：

Chang, Wen-Yuan ^{[1
,2
]}

Huang, Hsin-Wei ^{[3
]}

Wang, Wei-Ting ^{[3
]}

Hou, Cheng-Hao ^{[3
]}

Chueh, Yu-Lun ^{[3
]}

He, Jr-Hau ^{[1
,2
]}

机构：

[1] Natl Taiwan Univ, Inst Photon & Optoelect, Taipei 106, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan

[3] Natl TsingHua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2012年 / 159卷 / 03期

关键词：

POLYCRYSTALLINE NIO FILMS; MEMORY APPLICATIONS; OXIDE-FILMS;

D O I：

10.1149/2.092203jes

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

070208 [无线电物理];

摘要：

This study investigates the resistive switching behavior of Pt, Al, and Cr electrodes for ZnO-based resistance random access memory. Results show that the existence of oxygen ions in the electrode plays an important role in the resistive switching behavior during filament reduction and oxidization. The Cr/ZnO/Pt structure exhibited a significant improvement in resistive switching parameters such as operation voltages and resistance states. This is most likely due to the partial formation of oxidation layers, namely CrOx at the Cr/ZnO interface. These layers act as oxygen reservoir or oxygen supplier, and improve the efficiency of oxygen ion exchange near the electrode/oxide interface. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.092203jes] All rights reserved.

引用

页码：G29 / G32

页数：4

共 21 条

[1]

Reproducible switching effect in thin oxide films for memory applications [J].

Beck, A ;

Bednorz, JG ;

Gerber, C ;

Rossel, C ;

Widmer, D .

APPLIED PHYSICS LETTERS, 2000, 77 (01) :139-141

[2]

Polarity of Bipolar Resistive Switching Characteristics in ZnO Memory Films [J].

Chang, Wen-Yuan ;

Peng, Ching-Shiang ;

Lin, Cheng-Hung ;

Tsai, Jui-Ming ;

Chiu, Fu-Chien ;

Chueh, Yu-Lun .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (09) :H872-H875

[3]

Improvement of resistive switching characteristics in TiO2 thin films with embedded Pt nanocrystals [J].

Chang, Wen-Yuan ;

Cheng, Kai-Jung ;

Tsai, Jui-Ming ;

Chen, Hung-Jen ;

Chen, Frederick ;

Tsai, Ming-Jinn ;

Wu, Tai-Bor .

APPLIED PHYSICS LETTERS, 2009, 95 (04)

[4]

Influence of Crystalline Constituent on Resistive Switching Properties of TiO2 Memory Films [J].

Chang, Wen-Yuan ;

Ho, Yi-Tang ;

Hsu, Tzu-Cheng ;

Chen, Frederick ;

Tsai, Ming-Jinn ;

Wu, Tai-Bor .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2009, 12 (04) :H135-H137

[5]

Resistive switching characteristics in Pr0.7Ca0.3MnO3 thin films on LaNiO3-electrodized Si substrate [J].

Chang, Wen-Yuan ;

Liao, Jeng-Hwa ;

Lo, Yun-Shan ;

Wu, Tai-Bor .

APPLIED PHYSICS LETTERS, 2009, 94 (17)

[6]

Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications [J].

Chang, Wen-Yuan ;

Lai, Yen-Chao ;

Wu, Tai-Bor ;

Wang, Sea-Fue ;

Chen, Frederick ;

Tsai, Ming-Jinn .

APPLIED PHYSICS LETTERS, 2008, 92 (02)

[7]

Jagadish C, 2006, ZINC OXIDE BULK, THIN FILMS AND NANOSTRUCTURES: PROCESSING, PROPERTIES AND APPLICATIONS, P1

[8]

Resistive, Switching Characteristics of Sol-Gel Zinc Oxide Films for Flexible Memory Applications [J].

Kim, Sungho ;

Moon, Hanul ;

Gupta, Dipti ;

Yoo, Seunghyup ;

Choi, Yang-Kyu .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (04) :696-699

[9]

Lee H, 2008, STUD COMPUT INTELL, V110, P1, DOI 10.1109/IEDM.2008.4796677

[10]

Lide D.R, CRC HDB CHEM PHYS

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