Temperature dependence of forward current characteristics of GaN junction and Schottky rectifiers

被引：39

作者：

Baik, KH

Irokawa, Y

Ren, F ^{[1
]}

Pearton, SJ

Park, SS

Park, YJ

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[3] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi 4802292, Japan

[4] Samsung Adv Inst Technol, Suwon 440600, South Korea

来源：

SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 09期

关键词：

D O I：

10.1016/S0038-1101(03)00071-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A comparison was made of the forward current-voltage characteristics of bulk GaN Schottky and p-n junction rectifiers using a quasi-three-dimensional simulator. The model includes incomplete ionization of the deep Mg acceptor (175 meV) in the p(+)-GaN side of the junction and the temperature dependence of mobility and GaN band gap. The forward turn-on voltages, V-F, decrease with increasing temperature for both types of rectifier and are similar to2.5 V at 100 A cm(-2) at 573 K for the junction diodes and less than or equal to 1 V under similar conditions for the Schottky diodes. The effect of p-layer thickness and doping in the p-n junction was also investigated. (C) 2003 Published by Elsevier Science Ltd.

引用

页码：1533 / 1538

页数：6

共 35 条

[1] SiC device edge termination using finite area argon implantation [J].

Alok, D ;

Baliga, BJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (06) :1013-1017

[2]

*AV CORP, 2001, MEDICI 2 D SEM DEV S

[3] Edge termination design and simulation for bulk GaN rectifiers [J].

Baik, KH ;

Irokawa, Y ;

Ren, F ;

Pearton, SJ ;

Park, SS ;

Lee, SK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (05) :2169-2172

[4] High voltage (450 V) GaN schottky rectifiers [J].

Bandic, ZZ ;

Bridger, PM ;

Piquette, EC ;

McGill, TC ;

Vaudo, RP ;

Phanse, VM ;

Redwing, JM .

APPLIED PHYSICS LETTERS, 1999, 74 (09) :1266-1268

[5] Medici simulation of 6H-SiC oxide ramp profile Schottky structure [J].

Brezeanu, G ;

Fernandez, J ;

Millan, J ;

Badila, M ;

Dilimot, G .

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 :941-944

[6] Megawatt solid-state electronics [J].

Brown, ER .

SOLID-STATE ELECTRONICS, 1998, 42 (12) :2119-2130

[7]

Goldberg Yu., 2001, Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe

[8]

Heydt GT, 1998, MATER RES SOC SYMP P, V483, P3

[9] Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers [J].

Johnson, JW ;

Zhang, AP ;

Luo, WB ;

Ren, F ;

Pearton, SJ ;

Park, SS ;

Park, YJ ;

Chyi, JI .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (01) :32-36

[10] 1.6 A GaN Schottky rectifiers on bulk GaN substrates [J].

Johnson, JW ;

Lou, B ;

Ren, F ;

Palmer, D ;

Pearton, SJ ;

Park, SS ;

Park, YJ ;

Chyi, JI .

SOLID-STATE ELECTRONICS, 2002, 46 (06) :911-913

← 1 2 3 4 →