Analysis of ALD-processed thin films by ion-beam techniques

被引：64

作者：

Putkonen, M

Sajavaara, T

Niinistö, L

Keinonen, J

机构：

[1] Aalto Univ, Inorgan & Analyt Chem Lab, Espoo 02015, Finland

[2] Univ Jyvaskyla, Dept Phys, Jyvaskyla 40014, Finland

[3] Univ Helsinki, Accelerator Lab, FIN-00014 Helsinki, Finland

来源：

ANALYTICAL AND BIOANALYTICAL CHEMISTRY | 2005年 / 382卷 / 08期

关键词：

ion-beam techniques; atomic layer deposition; thin films; electroluminescent displays; high-k insulators;

D O I：

10.1007/s00216-005-3365-3

中图分类号：

Q5 [生物化学];

学科分类号：

071010 ; 081704 ;

摘要：

This review introduces the possibilities of ionbeam techniques for the analysis of thin films and thin film structures processed by atomic layer deposition (ALD). The characteristic features of ALD are also presented. The analytical techniques discussed include RBS, NRA and ERDA with its variants, viz. the TOFERDA and HI-ERDA. The thin film examples are taken from flat-panel display technology (TFEL structures) and the semiconductor industry (high-k insulators).

引用

收藏

页码：1791 / 1799

页数：9

相关论文

共 48 条

[1] Tert-butylamine and allylamine as reductive nitrogen sources in atomic layer deposition of TaN thin films [J].

Alén, P ;

Juppo, M ;

Ritala, M ;

Leskelä, M ;

Sajavaara, T ;

Keinonen, J .

JOURNAL OF MATERIALS RESEARCH, 2002, 17 (01) :107-114

[2] CHARACTERIZATION OF THIN-FILM ELECTROLUMINESCENT STRUCTURES BY SIMS AND OTHER ANALYTICAL TECHNIQUES [J].

ANTSON, H ;

GRASSERBAUER, M ;

HAMILO, M ;

HILTUNEN, L ;

KOSKINEN, T ;

LESKELA, M ;

NIINISTO, L ;

STINGEDER, G ;

TAMMENMAA, M .

FRESENIUS ZEITSCHRIFT FUR ANALYTISCHE CHEMIE, 1985, 322 (02) :175-180

[3] STOPPING POWER FOR LOW-VELOCITY HEAVY-IONS - (0.01-0.9) MEV/NUCLEON SI IONS IN 18 (Z=13-79) METALS [J].

ARSTILA, K ;

KEINONEN, J ;

TIKKANEN, P .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 101 (04) :321-326

[4] Monte Carlo simulation of multiple and plural scattering in elastic recoil detection [J].

Arstila, K ;

Sajavaara, T ;

Keinonen, J .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 174 (1-2) :163-172

[5]

ASHER SE, 1994, MICROANAL SOLIDS, P149

[6] Surface layer destruction during ion beam analysis [J].

Behrisch, R ;

von der Linden, W ;

von Toussaint, U ;

Grambole, D .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 155 (04) :440-446

[7]

BRIGGS D, 1990, PRACTICAL SURFACE AN, V1, P244

[8] Advanced characterization of high-k materials:: A nuclear approach [J].

Brijs, B ;

Huyghebaert, C ;

Nauwelaerts, S ;

Caymax, M ;

Vandervorst, W ;

Nakajima, K ;

Kimura, K ;

Bergmaier, A ;

Döllinger, G ;

Lennard, WN ;

Terwagne, G ;

Vantomme, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 190 :505-509

[9] Structure and stability of ultrathin zirconium oxide layers on Si(001) [J].

Copel, M ;

Gribelyuk, M ;

Gusev, E .

APPLIED PHYSICS LETTERS, 2000, 76 (04) :436-438

[10] Growth of iron oxide on yttria-stabilized zirconia by atomic layer deposition [J].

de Ridder, M ;

van de Ven, PC ;

van Welzenis, RG ;

Brongersma, HH ;

Helfensteyn, S ;

Creemers, C ;

Van Der Voort, P ;

Baltes, M ;

Mathieu, M ;

Vansant, EF .

JOURNAL OF PHYSICAL CHEMISTRY B, 2002, 106 (51) :13146-13153

← 1 2 3 4 5 →