Nitride-based light-emitting diodes with p-AlInGaN surface layers

被引：31

作者：

Kuo, CH ^{[1
]}

Lin, CC

Chang, SJ

Hsu, YP

Tsai, JM

Lai, WC

Wang, PT

机构：

[1] Natl Cent Univ, Inst Opt Sci, Chungli 320, Taiwan

[2] Kun Shan Univ, Dept Elect Engn, Tainan 710, Taiwan

[3] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[4] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[5] S Epitaxy Corp, Tainan 744, Taiwan

[6] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 70101, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2005年 / 52卷 / 10期

关键词：

InGaN/GaN; light-emitting diode (LED); p-AlInGaN; V-shap pits;

D O I：

10.1109/TED.2005.856817

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have prepared bulk p-AlInGaN layers and light-emitting diodes (LEDs) with p-AlInGaN surface layers by metal-organic chemical vapor deposition. By properly control the TNIAI and TMIn flow rates, we could match the lattice constant of p-AlInGaN to that of GaN. It was found that surface of the LED with p-AlInGaN layer was rough with a high density of hexagonal pits. Although the forward voltage of the LED with p-AlInGaN layer was slightly larger, it was found that we can enhance the output power by 54% by using p-AlInGaN surface layer.

引用

收藏

页码：2346 / 2349

页数：4

相关论文

共 17 条

[1] 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes [J].

Chang, SJ ;

Kuo, CH ;

Su, YK ;

Wu, LW ;

Sheu, JK ;

Wen, TC ;

Lai, WC ;

Chen, JF ;

Tsai, JM .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (04) :744-748

[2] Influence of growth temperature and reactor pressure on microstructural and optical properties of InAlGaN quaternary epilayers [J].

Cho, HK ;

Lee, KH ;

Kim, SW ;

Park, KS ;

Cho, YH ;

Lee, JH .

JOURNAL OF CRYSTAL GROWTH, 2004, 267 (1-2) :67-73

[3] Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening [J].

Fujii, T ;

Gao, Y ;

Sharma, R ;

Hu, EL ;

DenBaars, SP ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 2004, 84 (06) :855-857

[4]

KHIZAR M, 2005, APPL PHYS LETT, V86, P173

[5] Low temperature activation of Mg-doped GaN in O2 ambient [J].

Kuo, CH ;

Chang, SJ ;

Su, YK ;

Wu, LW ;

Sheu, JK ;

Chen, CH ;

Chi, GC .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (2A) :L112-L114

[6] InGaN/GaN light emitting diodes activated in O2 ambient [J].

Kuo, CH ;

Chang, SJ ;

Su, YK ;

Chen, JF ;

Wu, LW ;

Sheu, JK ;

Chen, CH ;

Chi, GC .

IEEE ELECTRON DEVICE LETTERS, 2002, 23 (05) :240-242

[7] InGaN-AlInGaN multiquantum-well LEDs [J].

Lai, WC ;

Chang, SJ ;

Yokoyam, M ;

Sheu, JK ;

Chen, JF .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2001, 13 (06) :559-561

[8] Investigations on V-defects in quaternary AlInGaN epilayers [J].

Liu, JP ;

Wang, YT ;

Yang, H ;

Jiang, DS ;

Jahn, U ;

Ploog, KH .

APPLIED PHYSICS LETTERS, 2004, 84 (26) :5449-5451

[9] Characterization of AlInGaN quaternary epilayers grown by metal organic chemical vapor deposition [J].

Liu, W ;

Soh, CB ;

Chen, P ;

Chua, SJ .

JOURNAL OF CRYSTAL GROWTH, 2004, 268 (3-4) :509-514

[10] High-temperature-grown quaternary AlInGaN epilayers and multiple quantum wells for ultraviolet emission [J].

Liu, Y ;

Egawa, T ;

Ishikawa, H ;

Jiang, H ;

Zhang, BJ ;

Hao, MS ;

Jimbo, T .

JOURNAL OF CRYSTAL GROWTH, 2004, 264 (1-3) :159-164