Investigations on V-defects in quaternary AlInGaN epilayers

被引：51

作者：

Liu, JP

Wang, YT

Yang, H

Jiang, DS

Jahn, U

Ploog, KH

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China

[3] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 26期

关键词：

D O I：

10.1063/1.1767959

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The characteristics of V-defects in quaternary AlInGaN epilayers and their correlation with fluctuations of the In distribution are investigated. The geometric size of the V-defects is found to depend on the In composition of the alloy. The V-defects are nucleated within the AlInGaN layer and associated with threading dislocations. Line scan cathodoluminescence (CL) shows a redshift of the emission peak and an increase of the half width of the CL spectra as the electron beam approaches the apex of the V-defect. The total redshift decreases with decreasing In mole fraction in the alloy samples. Although the strain reduction may partially contribute to the CL redshift, indium segregation is suggested to be responsible for the V-defect formation and has a main influence on the respective optical properties. (C) 2004 American Institute Of Physics.

引用

收藏

页码：5449 / 5451

页数：3

相关论文

共 21 条

[1] Mechanism of enhanced luminescence in InxAlyGa1-x-yN quaternary alloys [J].

Chen, CH ;

Huang, LY ;

Chen, YF ;

Jiang, HX ;

Lin, JY .

APPLIED PHYSICS LETTERS, 2002, 80 (08) :1397-1399

[2] Pit formation in GaInN quantum wells [J].

Chen, Y ;

Takeuchi, T ;

Amano, H ;

Akasaki, I ;

Yamano, N ;

Kaneko, Y ;

Wang, SY .

APPLIED PHYSICS LETTERS, 1998, 72 (06) :710-712

[3] High-quality p-n junctions with quaternary AlInGaN/InGaN quantum wells [J].

Chitnis, A ;

Kumar, A ;

Shatalov, M ;

Adivarahan, V ;

Lunev, A ;

Yang, JW ;

Simin, G ;

Khan, MA ;

Gaska, R ;

Shur, M .

APPLIED PHYSICS LETTERS, 2000, 77 (23) :3800-3802

[4] Indium segregation in InGaN quantum-well structures [J].

Duxbury, N ;

Bangert, U ;

Dawson, P ;

Thrush, EJ ;

Van der Stricht, W ;

Jacobs, K ;

Moerman, I .

APPLIED PHYSICS LETTERS, 2000, 76 (12) :1600-1602

[5]

Hangleiter A, 2003, GROUP III-NITRIDES AND THEIR HETEROSTRUCTURES: GROWTH, CHARACTERIZATION AND APPLICATIONS, P1816, DOI 10.1002/pssc.200303127

[6] Marked enhancement of 320-360 nm ultraviolet emission in quaternary InxAlyGa1-x-yN with In-segregation effect [J].

Hirayama, H ;

Kinoshita, A ;

Yamabi, T ;

Enomoto, Y ;

Hirata, A ;

Araki, T ;

Nanishi, Y ;

Aoyagi, Y .

APPLIED PHYSICS LETTERS, 2002, 80 (02) :207-209

[7] Lattice and energy band engineering in AlInGaN/GaN heterostructures [J].

Khan, MA ;

Yang, JW ;

Simin, G ;

Gaska, R ;

Shur, MS ;

zur Loye, HC ;

Tamulaitis, G ;

Zukauskas, A ;

Smith, DJ ;

Chandrasekhar, D ;

Bicknell-Tassius, R .

APPLIED PHYSICS LETTERS, 2000, 76 (09) :1161-1163

[8] Formation of V-shaped pits in InGaN/GaN multiquantum wells and bulk InGaN films [J].

Kim, IH ;

Park, HS ;

Park, YJ ;

Kim, T .

APPLIED PHYSICS LETTERS, 1998, 73 (12) :1634-1636

[9] Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes [J].

Kneissl, M ;

Treat, DW ;

Teepe, M ;

Miyashita, N ;

Johnson, NM .

APPLIED PHYSICS LETTERS, 2003, 82 (15) :2386-2388

[10] Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells [J].

Lin, YS ;

Ma, KJ ;

Hsu, C ;

Feng, SW ;

Cheng, YC ;

Liao, CC ;

Yang, CC ;

Chou, CC ;

Lee, CM ;

Chyi, JI .

APPLIED PHYSICS LETTERS, 2000, 77 (19) :2988-2990